A gauge for the precision measurement of the thickness of germanium and silicon wafers

Baker D.

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A gauge for the precision measurement of the thickness of germanium and silicon wafers

机译：精确测量锗和硅晶片厚度的量规

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Some of the difficulties associated with the precision measurement of the thickness of thin germanium and silicon wafers, together with several possible methods of measurement, are briefly discussed. A gauge which employs the optical-lever principle is described in which frictional restraint of the moving parts is reduced to that of a knife edge alone, thus ensuring good repeatability of reading with probe pressures of less than 3g. The gauge covers the range 0ÃÂ¿270 microns with an overall accuracy of ÃÂ±0.5 micron.

机译：简要讨论了与精确测量锗和硅薄片厚度有关的一些困难，以及几种可能的测量方法。描述了一种采用光学杠杆原理的压力计，其中，运动部件的摩擦约束减小到仅刀刃的摩擦约束，从而确保了在小于3g的探针压力下具有良好的读取重复性。该量规覆盖范围0×270微米，整体精度为±0.5微米。

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《Proceedings of the IEE - Part B: Electronic and Communication Engineering》 |1959年第17期|共3页
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Baker D.;
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1. Automatic measurement of thickness as applied to germanium wafer production in transistor manufacture [J] . Bicknell C.E. Proceedings of the IEE - Part B: Electronic and Communication Engineering . 1959,第17期

机译：自动测量厚度，应用于晶体管制造中的锗晶片生产
2. Influence of different chemical surface patterns on the dynamic wetting behaviour on flat and silanized silicon wafers during inclining-plate measurements: An experimental investigation with the high-precision drop shape analysis approach [J] . Heib F., Munief W. M., Ingebrandt S., Colloids and Surfaces, A. Physicochemical and Engineering Aspects . 2016,第Null期

机译：平板测量和硅烷化硅片上不同化学表面图案对动态润湿行为的影响：采用高精度液滴形状分析方法的实验研究
3. High-precision drop shape analysis (HPDSA) of quasistatic contact angles on silanized silicon wafers with different surface topographies during inclining-plate measurements: Influence of the surface roughness on the contact line dynamics [J] . Heib F., Hempelmann R., Munief W. M., Applied Surface Science . 2015,第jula1期

机译：倾斜板测量期间具有不同表面形貌的硅烷化硅晶片上准静态接触角的高精度液滴形状分析（HPDSA）：表面粗糙度对接触线动力学的影响
4. Silicon-Germanium (SiGe) composition and thickness determination via simultaneous smallspot XPS and XRF measurements [C] . L#039, herron Benoit, Loubet Nicolas, Annual SEMI Advanced Semiconductor Manufacturing Conference . 2014

机译：通过同时进行小点XPS和XRF测量来确定硅锗（SiGe）的成分和厚度
5. Measurement and control of silicon wafer temperature and oxide film thickness in rapid thermal processing using in situ ellipsometry. [D] . Sampson, Ronald Kevin. 1992

机译：使用原位椭偏仪在快速热处理中测量和控制硅片温度和氧化膜厚度。
6. Laser-based Thickness Control in a Double-Side Polishing System for Silicon Wafers [O] . Liang Zhu, Biao Mei, Weidong Zhu, 2020

机译：硅晶片双面抛光系统中基于激光的厚度控制
7. Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation [O] . Reiche, M., Moutanabbir, O., Himcinschi, C., 2008

机译：通过晶圆键合在晶圆级上应变的硅：材料加工，应变测量和应变松弛

A gauge for the precision measurement of the thickness of germanium and silicon wafers

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