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首页> 外文期刊>Proceedings of the IEE - Part B: Electronic and Communication Engineering >The design and performance of a high-speed silicon diode
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The design and performance of a high-speed silicon diode

机译：高速硅二极管的设计与性能

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With the increasing use of high-speed switching techniques a need has arisen for diodes with a fast transient response. The paper first considers the various methods by which the speed of semiconductor diodes may be improved by reducing carrier storage. In the silicon device described, this is accomplished by a reduction of the lifetime of the basic material. Of the two methods investigated, neutron bombardment and heat treatment, the latter was found to be the more effective. The heat treatment involves quenching the silicon from a temperature in excess of 1000°C. The paper then discusses the effect on the static characteristics of diodes made from silicon quenched in this manner. As a consequence of the reduction in lifetime the conductivity modulation of the base region is decreased, resulting in an inferior forward characteristic. In general, the reverse currents and breakdown voltages found are somewhat higher than in devices made with untreated material. A typical diode fabricated from silicon quenched from 1150°C passes a forward current of 10 mA at 1 volt, and has a reverse current of 0.1 ¿A at ¿100 volts. The methods of measuring the transient response of the device are discussed, and a comparison is made between them. A typical device has a switching time less than 0.2 microsec and a total recovered charge of 10¿10 coulomb.
机译：随着高速开关技术的日益普及，对具有快速瞬态响应的二极管的需求不断增加。本文首先考虑了可以通过减少载流子存储来提高半导体二极管速度的各种方法。在所描述的硅器件中，这是通过减少基础材料的寿命来实现的。在研究的两种方法（中子轰击和热处理）中，发现后者更为有效。热处理涉及从超过1000°C的温度淬火硅。然后，本文讨论了对以这种方式淬火的硅制成的二极管的静态特性的影响。由于寿命缩短的结果，基极区的电导率调制降低，导致正向特性变差。通常，发现的反向电流和击穿电压比未处理材料制成的器件要高一些。由1150°C淬火的硅制成的典型二极管在1伏时通过的正向电流为10 mA，在100伏时具有0.1的反向电流。讨论了测量器件瞬态响应的方法，并进行了比较。一个典型的设备具有不到0.2微秒的切换时间和10×10库仑的总回收电荷。

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