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首页> 外文期刊>Proceedings of the IEE - Part C: Monographs >Distortion due to the mismatch of transistors in push-pull audio-frequency amplifiers
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Distortion due to the mismatch of transistors in push-pull audio-frequency amplifiers

机译：推挽音频放大器中晶体管不匹配导致的失真

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摘要

In a class-B push-pull amplifier having balanced transformers, evenorder harmonic distortion can be caused by differences in the characteristics of the two transistors. By considering the voltage gain of the two halves of the amplifier it is possible to obtain general expressions from which distortion caused by any particular characteristic can be calculated. The paper is primarily concerned with audio-frequency amplification. It is necessary to consider harmonics outside this range because of the possibility of their giving rise to intermodulation products in the a.f. range. The parameters giving rise to distortion can be divided into the frequency-independent and frequency-dependent types. With regard to the frequency-independent parameters, the only significant factors are the current gain factor, the variation of basecollector current gain factor with emitter current and the extrinsic base resistance. In the case of the frequency-dependent parameters, which, in general, only become important at the higher audio frequencies, the significant factors are the collector capacitance, the variation of current gain with frequency and the carrier-storage effect. In order to obtain low distortion, some matching of transistor characteristics is necessary. Methods are described whereby this can be achieved by fairly simple measurements. Most of the work described in the paper is based on a low-power junction-type transistor. However, the methods used are quite general, and therefore applicable to other types of transistors.
机译：在具有平衡变压器的B类推挽放大器中，偶数阶谐波失真可能由两个晶体管的特性差异引起。通过考虑放大器的两半的电压增益，可以得到一般表达式，从中可以计算出由任何特定特性引起的失真。本文主要涉及音频放大。由于谐波可能会在a.f.中产生互调产物，因此有必要考虑超出此范围的谐波。范围。引起失真的参数可以分为与频率无关和与频率有关的类型。关于与频率无关的参数，唯一重要的因素是电流增益系数，基极集电极电流增益系数随发射极电流的变化以及外部基极电阻。对于频率相关的参数（通常仅在较高的音频频率下才重要），重要的因素是集电极电容，电流增益随频率的变化以及载波存储效应。为了获得低失真，需要晶体管特性的一些匹配。描述了可以通过相当简单的测量来实现的方法。本文中描述的大多数工作都是基于低功率结型晶体管。然而，所使用的方法是相当通用的，因此适用于其他类型的晶体管。

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