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Broadband transistor feedback amplifiers

机译:宽带晶体管反馈放大器

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摘要

The possibilities of negative-feedback amplifiers involving three cascaded common-emitter junction-transistor stages are investigated. Simple approximate expressions are given for the power gain, input impedance and output impedance of series, shunt and compound feedback amplifiers, for the case of large applied negative feedback. It is shown that with large negative feedback, dynamic stability considerations may be analysed with little error by considering the forward and return paths of the feedback loop as separable, in spite of the interaction effects between transistors. Owing to the restricted frequency range of application of the transistors employed, the maximum negative feedback possible without instability depends almost exclusively on the frequency characteristics of the current gain, ????????, of the transistor; it is found that the ????????-characteristics may be represented with adequate accuracy by a minimum-phase (RC) approximation, which leads to simple analysis both of stability conditions and of suitable phase and amplitude margins. Examples are given of feedback amplifiers having overall operating power gain and applied negative feedback of approximately 33dB and 30dB respectively, in which dynamic stability is secured by using phase-advancing networks in the return path of the feedback loop.
机译:研究了涉及三个级联的共射极结-晶体管级的负反馈放大器的可能性。对于大的负反馈应用,给出了串联,并联和复合反馈放大器的功率增益,输入阻抗和输出阻抗的简单近似表达式。结果表明,在负反馈较大的情况下,尽管晶体管之间存在相互作用,但通过将反馈环路的前向和返回路径视为可分离的,可以以很小的误差分析动态稳定性。由于所用晶体管的应用频率范围受到限制,在没有不稳定性的情况下可能产生的最大负反馈几乎完全取决于晶体管电流增益的频率特性。可以发现,通过最小相位(RC)近似可以以足够的精度来表示Δ∑特征,这使得可以简单地分析稳定性条件以及合适的相位和幅度裕度。给出了具有总工作功率增益和分别施加大约33dB和30dB的负反馈的反馈放大器的示例,其中通过在反馈回路的返回路径中使用相位超前网络来确保动态稳定性。

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