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首页> 外文期刊>Proceedings of the institution of mechanical engineers >Fabrication of nanostructured silicon nitride thin film gas sensors by reactive direct current magnetron sputtering
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Fabrication of nanostructured silicon nitride thin film gas sensors by reactive direct current magnetron sputtering

机译：反应性直流磁控溅射法制备纳米结构氮化硅薄膜气体传感器

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摘要

In this work, high-quality nanostructured silicon nitride films were prepared by reactive direct current magnetron sputtering technique. The properties of the prepared structures were determined by the ratios of gases (argon and nitrogen) in the discharge gas mixture. This parameter was effectively seen important to control the structural characteristics of the prepared nanostructures, especially surface roughness and particle size. The prepared nanostructures were successfully tested for gas-sensing applications and they exhibited reasonably high sensitivity for their resistance changes to gas concentration with increasing temperature (up to 96% at 350 ℃). This work can be good attempt to use silicon nitride nanostructures in such important application.
机译：在这项工作中，通过反应性直流磁控溅射技术制备了高质量的纳米结构氮化硅膜。所制备的结构的性质由排气混合物中的气体（氩气和氮气）之比确定。有效地看到该参数对于控制所制备的纳米结构的结构特征，特别是表面粗糙度和粒度非常重要。所制备的纳米结构已成功进行了气敏应用测试，并且随着温度的升高（在350℃时高达96％），它们对气体浓度的电阻变化表现出相当高的灵敏度。这项工作是在这样重要的应用中使用氮化硅纳米结构的良好尝试。

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