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首页> 外文期刊>Proceedings of the institution of mechanical engineers >A single-walled carbon nanotube thin film solar microcell with V-groove array structure
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A single-walled carbon nanotube thin film solar microcell with V-groove array structure

机译:具有V型槽阵列结构的单壁碳纳米管薄膜太阳能微电池

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摘要

This article reports an exploratory single-walled carbon nanotube thin film solar microcell with V-groove array structure on Si (100) substrate. Single-walled carbon nanotube thin film-Si heterojunction serves as energy conversion part in solar microcells, including electron-hole pair generation, carrier collection and transportation. V-groove was designed and prepared on silicon substrate by KOH anisotropic wet-etching for improving the performance of solar microcell. Simple solution-evaporation method was used to achieve conformal single-walled carbon nanotube thin film on V-groove silicon substrate. Under 100 mW/cm~2 solar illumination, our solar microcell with V-groove arrays shows open-circuit voltage (V_(OC)) of 195 mV, short-circuit current density (J_(SC)) of 4.76 μA/cm~2 and fill factor of 24.8%. The V_(OC) and J_(SC) are, respectively, enhanced by 387.5% and 217.3% compared to the microcell without V-groove arrays. It is proved that the V-groove structure can improve the performance of single-walled carbon nanotube thin film solar microcell.
机译:本文报道了一种在Si(100)衬底上具有V形槽阵列结构的探索性单壁碳纳米管薄膜太阳能微电池。单壁碳纳米管薄膜-硅异质结在太阳能微电池中用作能量转换部分,包括电子-空穴对的产生,载流子的收集和传输。通过KOH各向异性湿法刻蚀法在硅衬底上设计并制备了V型槽,以提高太阳能电池的性能。采用简单的溶液蒸发法在V型槽硅衬底上制备共形的单壁碳纳米管薄膜。在100 mW / cm〜2的太阳光照下,我们的带有V型槽阵列的太阳能电池显示的开路电压(V_(OC))为195 mV,短路电流密度(J_(SC))为4.76μA/ cm〜 2,填充因子为24.8%。与没有V形槽阵列的微单元相比,V_(OC)和J_(SC)分别提高了387.5%和217.3%。实践证明,V型槽结构可以提高单壁碳纳米管薄膜太阳能微电池的性能。

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