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首页> 外文期刊>Proceedings of the Institution of Mechanical Engineers. Part L, Journal of Materials: Design and Application >Characteristics of CdO-Si heterostructure produced by plasma-induced bonding technique
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Characteristics of CdO-Si heterostructure produced by plasma-induced bonding technique

机译：等离子体诱导键合技术制备的CdO-Si异质结构的特征

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摘要

In the current work, the characteristics of the CdO-Si structure produced by plasma-induced bonding technique were studied. The produced structure was an asymmetric hetero-junction consisting of n-type cadmium oxide (CdO) on a p-type silicon substrate. The Si substrate and CdO sample were bonded by subjecting them to the plasma formed between two electrodes. The measurements included the structural and electrical characteristics. The built-in potential of the produced heterojunction is about 0.9 eV with typical spectral responsiv-ity within the range 300-900 nm. With dark current of 50 |xA, maximum reverse bias current of 180 μA and ideality factor of 1.18, the results explained better characteristics than those of the same heterojunction produced by thermal evaporation technique.
机译：在当前的工作中，研究了等离子体诱导键合技术产生的CdO-Si结构的特性。产生的结构是在p型硅衬底上由n型氧化镉（CdO）组成的不对称异质结。通过使Si衬底和CdO样品经受在两个电极之间形成的等离子体而将其粘合。测量包括结构和电气特性。产生的异质结的内建电势约为0.9 eV，典型光谱响应度在300-900 nm范围内。在50 | xA的暗电流，180μA的最大反向偏置电流和1.18的理想因子的情况下，与采用热蒸发技术生产的相同异质结相比，结果具有更好的特性。

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