Voltage-controlled gating in a large conductance Ca~2+-sensitive K~+channel (hslo)

E. Stefani; M. Ottolia; F. Noceti

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Voltage-controlled gating in a large conductance Ca~2+-sensitive K~+channel (hslo)

机译：大电导Ca〜2 +敏感K〜+通道中的电压控制门控（hslo）

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摘要

Large conductance calcium- and voltage- sensitive K~+ (MaxiK) channels share properties of voltage- and ligand-gated ion channels. In voltage-gated channels, membrane depolarization promotes the displacement of charged residues contained in the voltage sensor (S4 region) inducing gating currents and pore opening. In MaxiK chan- nels, both voltage and micromolar internal Ca~2+ favor pore opening.

机译：大电导的钙和电压敏感的K〜+（MaxiK）通道具有电压和配体门控离子通道的特性。在电压门控通道中，膜去极化会促进电压传感器（S4区域）中包含的带电残留物的位移，从而引起门控电流和开孔。在MaxiK通道中，电压和微摩尔内部Ca〜2 +都有利于开孔。

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《Proceedings of the National Academy of Sciences of the United States of America》 |1997年第10期|p.5427-5431|共5页
作者
E. Stefani; M. Ottolia; F. Noceti;
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收录信息美国《科学引文索引》(SCI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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正文语种 eng
中图分类自然科学总论;
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6. Voltage-controlled gating in a large conductance Ca2+-sensitive K+channel (hslo) [O] . E. Stefani, M. Ottolia, F. Noceti, 1997

机译：大电导Ca2 +敏感的K +通道s（hslo）中的电压控制选通
7. Voltage-controlled gating in a large conductance Ca2+-sensitive K+channel (hslo) [O] . E. Stefani, M. Ottolia, F. Noceti, 1997

机译：在大电导Ca2 + -sisispitive k +通道（Hslo）中的电压控制的栅极

Voltage-controlled gating in a large conductance Ca~2+-sensitive K~+channel (hslo)

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