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首页> 外文期刊>Proceedings of the National Academy of Sciences of the United States of America >Topological quantum phase transitions driven by external electric fields in Sb_2Te_3 thin films
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Topological quantum phase transitions driven by external electric fields in Sb_2Te_3 thin films

机译:Sb_2Te_3薄膜中外电场驱动的拓扑量子相变

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摘要

Using first-principles calculations, we show that topological quantum phase transitions are driven by external electric fields in thin films of Sb_2Te_3. The film, as the applied electric field normal to its surface increases, is transformed from a normal insulator to a topological insulator or vice versa depending on the film thickness. We identify the band topology by directly calculating the Z_2 invariant from electronic wave functions. The dispersion of edge states is also found to be consistent with the bulk band topology in view of the bulk-boundary correspondence. We present possible applications of the topological phase transition as an on/off switch of the topologically protected edge states in nano-scale devices.
机译:使用第一性原理计算,我们表明拓扑量子相变是由Sb_2Te_3薄膜中的外部电场驱动的。随着垂直于其表面的施加电场的增加,薄膜会根据薄膜厚度从正常绝缘体转变为拓扑绝缘体,反之亦然。我们通过直接从电子波函数计算Z_2不变性来识别能带拓扑。鉴于体-边界对应,还发现边缘状态的分散与体带拓扑一致。我们介绍了拓扑相变的可能应用,作为纳米级设备中拓扑保护的边缘状态的开/关开关。

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