Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge_2Sb_2Te_5 phase-change memory alloy

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• 来源
  《Proceedings of the National Academy of Sciences of the United States of America》 |2012年第18期|p.6796-6797|共2页
• 作者

  M. Xu; Y. Q. Cheng; L Wang; H. W. Sheng; Y. Meng; W. G. Yang; X. D. Han; E. Ma;

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• 作者单位

  Department of Materials'Science and Engineering, the Johns Hopkins University, Baltimore, MD 21218;

  Department of Materials'Science and Engineering, the Johns Hopkins University, Baltimore, MD 21218 Chemical and Engineering Materials Division,Oak Ridge National Laboratory, Oak Ridge, TN 37381;

  High Pressure Synergetic Consortium, Carnegie Institution of Washington, Argonne, IL 60439 State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, China;

  School of Physics, Astronomy and Computational Sciences,George Mason University, Fairfax, VA 22030;

  High Pressure Collaborative Access Team, Carnegie Institution of Washington, Argonne, IL 60439;

  High Pressure Synergetic Consortium, Carnegie Institution of Washington, Argonne, IL 60439;

  Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China;

  Department of Materials'Science and Engineering, the Johns Hopkins University, Baltimore, MD 21218;

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