A Density Metric for Semiconductor Technology [Point of View]

Wong H. -S. Philip; Akarvardar Kerem; Antoniadis Dimitri; Bokor Jeffrey; Hu Chenming; King-Liu Tsu-Jae; Mitra Subhasish; Plummer James D.; Salahuddin Sayeef

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A Density Metric for Semiconductor Technology [Point of View]

机译：半导体技术的密度度量[观点]

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Since its inception, the semiconductor industry has used a physical dimension (the minimum gate length of a transistor) as a means to gauge continuous technology advancement. This metric is all but obsolete today. As a replacement, we propose a density metric, which aims to capture how advances in semiconductor device technologies enable system-level benefits. The proposed metric can be used to gauge advances in future generations of semi-conductor technologies in a holistic way, by accounting for the progress in logic, memory, and packaging/integration technologies simultaneously.

机译：自成立以来，半导体工业使用了物理尺寸（晶体管的最小栅极长度）作为仪表的手段，以便连续技术进步。这个度量标准都是今天过时的。作为替代品，我们提出了一种密度度量，旨在捕获半导体器件技术的进步如何实现系统级益处。拟议的指标可用于通过同时占逻辑，内存和包装/集成技术的进展，以全面的方式衡量未来几代半导体技术的进步。

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来源
《Proceedings of the IEEE》 |2020年第4期|478-482|共5页
作者
Wong H. -S. Philip; Akarvardar Kerem; Antoniadis Dimitri; Bokor Jeffrey; Hu Chenming; King-Liu Tsu-Jae; Mitra Subhasish; Plummer James D.; Salahuddin Sayeef;
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作者单位

Stanford Univ Stanford CA 94305 USA|Taiwan Semicond Mfg Co Hsinchu 300 Taiwan;

Taiwan Semicond Mfg Co Hsinchu 300 Taiwan;

MIT 77 Massachusetts Ave Cambridge MA 02139 USA;

Univ Calif Berkeley Berkeley CA 94720 USA;

Univ Calif Berkeley Berkeley CA 94720 USA;

Univ Calif Berkeley Berkeley CA 94720 USA;

Stanford Univ Stanford CA 94305 USA;

Stanford Univ Stanford CA 94305 USA;

Univ Calif Berkeley Berkeley CA 94720 USA;

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原文格式 PDF
正文语种 eng
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关键词
Semiconductor device measurement; Density measurement;

机译：半导体器件测量;密度测量;

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专利

1. View from the top: Semiconductors and the second industrial revolution: The first was essentially an oil-based revolution, while today's information revolution uses the fundamental technology of semiconductors [J] . Petritz Richard Potentials, IEEE . 1982,第1期

机译：俯视图：半导体和第二次工业革命：第一次本质上是石油革命，而当今的信息革命使用了半导体的基本技术
2. NEW PACKAGING TECHNOLOGY DOUBLES CURRENT DENSITY IN POWER SEMICONDUCTORS [J] . Electronics world . 2011,第1903期

机译：新包装技术使功率半导体的电流密度增加一倍
3. A review of recent results on electrochemical determination of the density of electronic states of nanostructured metal-oxide semiconductors and organic hole conductors [J] . Bisquert J, Fabregat-Santiago F, Mora-Sero I, Inorganica Chimica Acta . 2008,第3期

机译：电化学测定纳米结构金属氧化物半导体和有机空穴导体的电子态密度的最新研究进展
4. Overview of Metrology Requirements based on the 1994 National Technology Roadmap for Semiconductors [C] . Alain C. Diebold 1995 advanced semiconductor manufacturing conference and workshop . 1995

机译：基于1994年国家半导体技术路线图的计量要求概述
5. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications [D] . Hong, Augustin Jinwoo 2010

机译：用于超高密度，低功耗非易失性存储应用的高性能金属氧化物半导体器件的技术突破
6. Technology Roadmaps for Compound Semiconductors [O] . Herbert S. Bennett 2000

机译：复合半导体技术路线图
7. A Density Metric for Semiconductor Technology Point of View [O] . H.-S. Philip Wong, Kerem Akarvardar, Dimitri Antoniadis, 2020

机译：半导体技术的密度度量观点
8. Semiconductor Measurement Technology: The Relationship between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon [R] . Thurber, W. R. , Mattis, R. L. , Liu, Y. M. , 1981

机译：半导体测量技术：磷和硼掺杂硅的电阻率和掺杂浓度之间的关系

A Density Metric for Semiconductor Technology [Point of View]

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