Flexible a-Si:H Position-Sensitive Detectors

E. FORTUNATO; L. PEREIRA; H. AGUAS; I. FERREIRA; R. MARTINS

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Flexible a-Si:H Position-Sensitive Detectors

机译：灵活的a-Si：H位置敏感检测器

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Flexible and large area (5 mm × 80 mm with an active length of 70 mm) position-sensitive detectors (PSDs) deposited onto polymeric substrates (polyimide-Kapton VN) have been fabricated. The optimized structure presented is based on a heterojunction of amorphous silicon (a-Si:H)/ZnO:Al. The sensors were characterized by spectral response, photocurrent dependence as a function of light intensity, and position detection measurements. The set of data obtained on one-dimensional PSDs based on the heterojunction show excellent performances with a maximum spectral response of 0.12 A/Wat 500 nm and a nonlinearity of ±10% over 70-mm length. The produced sensors present a nonlinearity higher than those ones produced on glass substrates, due to the different thermal coefficients exhibited by the polymer and the a-Si:H film. In order to prove this behavior, it was measured the defect density obtained by the constant photocurrent method on a-Si:H thin films deposited on polymeric substrates and bent with different radii of curvature.

机译：已经制造出了可弯曲的大面积（5 mm×80 mm，有效长度为70 mm）位置敏感检测器（PSD），该位置敏感检测器沉积在聚合物基材（聚酰亚胺-Kapton VN）上。所示的优化结构基于非晶硅（a-Si：H）/ ZnO：Al的异质结。传感器的特征在于光谱响应，光强与光强的关系以及位置检测结果。在基于异质结的一维PSD上获得的数据集显示了出色的性能，在500 nm处的最大光谱响应为0.12 A / W，在70 mm的长度上具有±10％的非线性。由于聚合物和a-Si：H膜表现出不同的热系数，因此制成的传感器呈现出比玻璃基板上更高的非线性。为了证明这种行为，测量了通过恒定光电流法在沉积在聚合物基板上并以不同曲率半径弯曲的a-Si：H薄膜上获得的缺陷密度。

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来源
《Proceedings of the IEEE》 |2005年第7期|p.1281-1286|共6页
作者
E. FORTUNATO; L. PEREIRA; H. AGUAS; I. FERREIRA; R. MARTINS;
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作者单位

Dept. of Mater. Sci., New Univ. of Lisbon, Caparica, Portugal;

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原文格式 PDF
正文语种 eng
中图分类一般性问题;无线电电子学、电信技术;
关键词
Amorphous silicon (a-Si:H); Heterojunction; Polyimide substrates; Position-sensitive detectors (PSDs); Photodetectors; Thin films;

机译：非晶硅（a-Si：H）;异质结;聚酰亚胺衬底;位置敏感探测器（PSDs）;光电探测器;薄膜;

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Flexible a-Si:H Position-Sensitive Detectors

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