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首页> 外文期刊>Proceedings of the IEEE >Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS
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Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

机译：通信技术的现状和方向-SiGe BiCMOS和RFCMOS

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摘要

We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies that are based on the standard foundry compatible CMOS node are discussed - SiGe BiCMOS HP ("high performance") tailored to high-frequency applications, SiGe BiCMOS WL ("cost performance") tailored to wireless/storage applications, and RF-CMOS optimized for low-cost consumer applications. Future opportunities and challenges for advancement in RF technologies are described in light of CMOS and SiGe heterojunction bipolar transistor scaling. In addition, we discuss the maturity of SiGe BiCMOS by looking at the levels of integration and manufacturability.
机译：我们介绍了针对无线，网络，仪器和存储市场等应用的硅半导体技术的现状和方向。讨论了基于标准代工兼容CMOS节点的RF代工技术的多个分支的各个技术方面-为高频应用量身定制的SiGe BiCMOS HP（“高性能”），为量身定制的SiGe BiCMOS WL（“性价比”）无线/存储应用，以及针对低成本消费类应用进行了优化的RF-CMOS。鉴于CMOS和SiGe异质结双极晶体管缩放，描述了RF技术发展的未来机遇和挑战。此外，我们通过考察集成度和可制造性的水平来讨论SiGe BiCMOS的成熟度。

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