Radiation effects on microelectronics in space

著录项

• 来源
  《Proceedings of the IEEE》 |1988年第11期|P.1443-1469|共27页
• 作者

  Srour J.R.; McGarrity J.M.;

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• 作者单位

  Northrop Res. & Technol. Center, Palos Verdes Peninsula, CA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类 一般性问题;无线电电子学、电信技术;
• 关键词

  failure analysis; integrated circuit technology; radiation effects; radiation hardening (electronics); semiconductor technology; basic mechanisms; circuits; damage mechanisms; devices; dose enhancement; effects of displacement damage; hardening approaches; ionizing radiation; microelectronics; optoelectronic devices; passive components; permanent failure of devices; simulation; single-event phenomena; space radiation effects; space radiation environment; temporary failure of devices;

  机译：故障分析;集成电路技术;辐射效应;辐射硬化（电子）;半导体技术;基本机制;电路;损坏机制;设备;剂量增强;位移损伤的影响;硬化方法;电离辐射;微电子;光电设备;无源元件设备永久性故障;仿真;单事件现象;空间辐射效应;空间辐射环境;设备暂时性故障;