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首页> 外文期刊>Progress in crystal growth and characterization of materials >Arsenides-and related Ⅲ-Ⅴ materials-based multilayered structures for terahertz applications: Various designs and growth technology
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Arsenides-and related Ⅲ-Ⅴ materials-based multilayered structures for terahertz applications: Various designs and growth technology

机译：用于太赫兹应用的基于砷和相关的Ⅲ-α材料的多层结构：各种设计和生长技术

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摘要

The fabrication and investigation of single and multilayered structures have become an essential issue in the past decades since these structures directly define valuable properties and efficiency of widely used terahertz (THz) emitters and detectors. Since the development of molecular-beam epitaxy, as well as other crystal growth techniques, a variety of structural designs has appeared and has been proposed. Since that, an enormous progress has been achieved beginning from the pioneering work on photoconductivity in silicon toward different multilayered heterostructures. The last are now commonly utilized as base components in photoconductive THz emitters/detectors, quantum-cascade lasers for pulsed and continuous-wave THz spectroscopic and imaging systems providing critical fundamental and practical applications at the forefront of scientific knowledge (sensors, flexible electronics, security systems, biomedicine, and others). This review summarizes the developments in different approaches and crystal growth techniques, emphasizing the importance of using single and multilayered arsenides-and related Ⅲ-Ⅴ materials-based (phosphides, antimonides, bismuthides) structures to accomplish the needs of modern and existing instruments of THz science and technology.
机译：单层结构的制造和调查已成为过去几十年的重要问题，因为这些结构直接限定了广泛使用的太赫兹（THz）发射器和探测器的有价值性和效率。由于分子光束外延的发展，以及其他晶体生长技术，已经出现了各种结构设计。自那下，从硅中的光电导性朝向不同多层异质结构开始实现了巨大进步。现在，最后一个通常用作光电导Thz发射器/探测器中的基本组件，用于脉冲和连续波的光谱和成像系统的量子级联激光器，在科学知识（传感器，柔性电子，安全性的最前沿，提供关键的基本和实用的应用系统，生物医学和其他人）。本综述总结了不同方法和晶体生长技术的发展，强调使用单一和多层砷和相关的Ⅲ-β基于材料（磷化糖苷，铋）结构，以实现现代和现有曲目的需求科学和技术。

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