首页> 外文期刊>Radiation Protection Dosimetry >MULTI-PHYSICS MODELLING CONTRIBUTIONS TO INVESTIGATE THE ATMOSPHERIC COSMIC RAYS ON THE SINGLE EVENT UPSET SENSITIVITY ALONG THE SCALING TREND OF CMOS TECHNOLOGIES
【24h】

MULTI-PHYSICS MODELLING CONTRIBUTIONS TO INVESTIGATE THE ATMOSPHERIC COSMIC RAYS ON THE SINGLE EVENT UPSET SENSITIVITY ALONG THE SCALING TREND OF CMOS TECHNOLOGIES

机译:沿着CMOS技术的标度趋势研究单事件超敏度的大气宇宙射线的多物理场建模贡献

获取原文
获取原文并翻译 | 示例
           

摘要

Particles originating from primary cosmic radiation, which hit the Earth's atmosphere give rise to a complex field of secondary particles. These particles include neutrons, protons, muons, pions, etc. Since the 1980s it has been known that terrestrial cosmic rays can penetrate the natural shielding of buildings, equipment and circuit package and induce soft errors in integrated circuits. Recently, research has shown that commercial static random access memories are now so small and sufficiently sensitive that single event upsets (SEUs) may be induced from the electronic stopping of a proton. With continued advancements in process size, this downward trend in sensitivity is expected to continue. Then, muon soft errors have been predicted for nano-electronics. This paper describes the effects in the specific cases such as neutron-, proton-and muon-induced SEU observed in complementary metal-oxide semiconductor. The results will allow investigating the technology node sensitivity along the scaling trend.
机译:来自初级宇宙辐射的粒子撞击地球大气层,产生了复杂的次级粒子场。这些粒子包括中子,质子,μ子,介子等。自1980年代以来,人们已经知道,地面宇宙射线可以穿透建筑物,设备和电路封装的自然屏蔽并在集成电路中引起软错误。近来,研究表明,商业静态随机存取存储器现在是如此之小,并且足够灵敏,以至于质子的电子停止可能引起单事件翻转(SEU)。随着工艺尺寸的不断提高,灵敏度的这种下降趋势有望继续。然后,已经针对纳米电子学预测了μ子软错误。本文描述了在特定情况下的影响,例如在互补金属氧化物半导体中观察到的中子,质子和介子诱导的SEU。结果将允许沿着缩放趋势调查技术节点的敏感性。

著录项

  • 来源
    《Radiation Protection Dosimetry》 |2014年第4期|290-294|共5页
  • 作者单位

    The French Aerospace Lab, ONERA, Toulouse 31055, France;

    Thales Systemes Aeroportes, Pessac 33600, France;

    The French Aerospace Lab, ONERA, Toulouse 31055, France,IRSN, Saint Paul-Lez-Durance 13115, France;

    Thales Systemes Aeroportes, Pessac 33600, France;

    IRSN, Saint Paul-Lez-Durance 13115, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号