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Superiority of random inverted nanopyramid as efficient light trapping structure in ultrathin flexible c-Si solar cell

机译:随机倒置纳米金字塔在超薄柔性c-Si太阳能电池中作为高效光捕获结构的优势

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摘要

In this work, random inverted nanopyramids (INPs) are fabricated as light trapping structures on ultrathin c-Si through a simple and cost-effective wet chemical method, followed by a systematic investigation of the photo-capturing properties of INPs combining experiments and simulations. In comprehensive consideration of thickness loss and light trapping performance, random INPs are applied onto 45 mu m ultrathin c-Si solar cell and a high short-current density (Jsc) (36.6 mA/cm(2)) and energy-conversion efficiency (17.0%) are achieved, which are 0.3 mA/cm(2) and 0.13% respectively higher than that in micro pyramid textured one, and our electrical simulation also demonstrates that the advantages of INPs are more obvious on thinner c-Si compared with conventional micro pyramids. Finally, through electrical simulation, INPs textured 45 mu m c-Si solar cell is expected to have a large improvement room for efficiency by controlling the front and rear surface recombination velocity. All the findings not only offer additional insight into the light-trapping mechanism in the random INPs but also provide controllable and efficient broadband light harvesters for next-generation cost effective flexible photovoltaics. (C) 2018 Elsevier Ltd. All rights reserved.
机译:在这项工作中,通过简单且具有成本效益的湿化学方法,在超薄c-Si上将无规倒置纳米金字塔(INP)制成光捕获结构,然后结合实验和模拟系统地研究了INPs的光捕获特性。在综合考虑厚度损失和光捕获性能的基础上,将随机INP应用于45μm超薄c-Si太阳能电池,并具有高短路电流密度(Jsc)(36.6 mA / cm(2))和能量转换效率(达到了17.0%),分别比微棱锥纹理之一高0.3mA / cm(2)和0.13%,并且我们的电仿真结果还表明,与常规相比,在更薄的c-Si上INP的优势更加明显微金字塔。最后,通过电模拟,通过控制前表面和后表面的复合速度,预计INPs纹理化的45微米c-Si太阳能电池具有更大的效率提升空间。所有发现不仅为随机INP中的陷光机制提供了更多见解,而且还为下一代成本有效的柔性光伏电池提供了可控且有效的宽带光收集器。 (C)2018 Elsevier Ltd.保留所有权利。

著录项

  • 来源
    《Renewable energy》 |2019年第4期|883-892|共10页
  • 作者单位

    Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab Mat & Technol Energy Convers, Coll Mat Sci & Technol, Nanjing 210016, Jiangsu, Peoples R China;

    Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab Mat & Technol Energy Convers, Coll Mat Sci & Technol, Nanjing 210016, Jiangsu, Peoples R China;

    Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab Mat & Technol Energy Convers, Coll Mat Sci & Technol, Nanjing 210016, Jiangsu, Peoples R China;

    Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 210016, Jiangsu, Peoples R China;

    Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab Mat & Technol Energy Convers, Coll Mat Sci & Technol, Nanjing 210016, Jiangsu, Peoples R China;

    Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab Mat & Technol Energy Convers, Coll Mat Sci & Technol, Nanjing 210016, Jiangsu, Peoples R China;

    Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 210016, Jiangsu, Peoples R China;

    Changshu Inst Technol, Dept Phys, Changshu 215500, Jiangsu, Peoples R China;

    Suzhou Talesun Technol Co Ltd, Changshu 215542, Jiangsu, Peoples R China;

    Suzhou Talesun Technol Co Ltd, Changshu 215542, Jiangsu, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ultrathin c-Si solar cells; Photovoltaic devices; Metal assisted chemical etching; Mask-less fabrication; Inverted nanopyramids texturing; Light management;

    机译:超薄c-Si太阳能电池;光伏器件;金属辅助化学蚀刻;无面膜制造;倒置的纳米金字塔形纹理;光管理;

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