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首页> 外文期刊>Review of Scientific Instruments >Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
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Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction

机译：反应性溅射磁控管反应器用于薄膜制备和X射线衍射同时进行原位结构研究

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摘要

The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, θ-2θ scanning, fixed α-2θ scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer.
机译：设计的反应器的目的是（i）通过反应溅射磁控管诱导的受控沉积获得多晶和/或非晶薄膜，以及（ii）通过X射线衍射对沉积的薄膜进行平行原位结构研究，在整个增长过程中实时进行。设计的反应器允许控制和精确改变相关处理参数，即磁控管到样品的距离，直流磁控管电压，气体混合物的性质，气体压力和基板温度。另一方面，该腔室可用于不同的X射线衍射扫描模式，即θ-2θ扫描，固定α-2θ扫描以及低角度技术，例如掠入射小角度X射线散射和X-射线反射率。将该室安装在位于同步加速器光束线中的标准四圆衍射仪上，并首先用于AlN薄膜在（100）硅片表面生长期间的初步X射线衍射分析。

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