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Determination and correction of distortions and systematic errors in low-energy electron diffraction

机译:低能电子衍射中畸变和系统误差的确定和校正

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摘要

We developed and implemented an algorithm to determine and correct systematic distortions in low-energy electron diffraction (LEED) images. The procedure is in principle independent of the design of the apparatus (spherical or planar phosphorescent screen vs. channeltron detector) and is therefore applicable to all device variants, known as conventional LEED, micro-channel plate LEED, and spot profile analysis LEED. The essential prerequisite is a calibration image of a sample with a well-known structure and a suitably high number of diffraction spots, e.g., a Si(111)-7×7 reconstructed surface. The algorithm provides a formalism which can be used to rectify all further measurements generated with the same device. In detail, one needs to distinguish between radial and asymmetric distortion. Additionally, it is necessary to know the primary energy of the electrons precisely to derive accurate lattice constants. Often, there will be a deviation between the true kinetic energy and the value set in the LEED control. Here, we introduce a method to determine this energy error more accurately than in previous studies. Following the correction of the systematic errors, a relative accuracy of better than 1% can be achieved for the determination of the lattice parameters of unknown samples.
机译:我们开发并实施了一种算法,可确定和纠正低能电子衍射(LEED)图像中的系统畸变。该程序原则上与设备的设计无关(球形或平面磷光屏vs.通道加速器检测器),因此适用于所有设备变体,称为常规LEED,微通道板LEED和斑点轮廓分析LEED。基本前提是具有众所周知的结构和适当数量的衍射点(例如,Si(111)-7×7重建表面)的样品的校准图像。该算法提供了一种形式主义,可用于纠正由同一设备生成的所有其他测量结果。详细地,需要区分径向失真和非对称失真。另外,有必要精确地知道电子的一次能量以得出准确的晶格常数。通常,真实动能与LEED控件中设置的值之间会有偏差。在这里,我们介绍一种比以前的研究更准确地确定此能量误差的方法。在校正了系统误差之后,对于确定未知样品的晶格参数,可以达到优于1%的相对精度。

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