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首页> 外文期刊>Review of Scientific Instruments >Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic stripping
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Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic stripping

机译：全自动设备，用于通过电学测量和阳极剥离法确定Si中的掺杂分布

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A completely automatic, computer‐controlled apparatus for the determination of doping profiles in silicon has been set up. Doping is determined by resistivity and Hall measurements associated with the subsequent removal of controlled thin layers of material. Anodic oxidation and subsequent oxide stripping by chemical etching has been chosen as the most controllable peeling technique. Electrical measurements are automatically detected and both carrier concentration and mobility values are plotted versus depth. A set of empirical parameters are provided to fit mobility‐concentration data for P, B, and As available in the literature, with analytical expressions. In this way, comparison with experimental values detected in the profiling operation can be readily made and information on the presence of lattice imperfections can be obtained. A new technique for sample preparation, which uses an ultrasonic drill for mesa etching the van der Pauw pattern, is also described. With this apparatus the critical and time wasting operation of electrical activity profiling becomes a powerful method of standard analysis.
机译：已经建立了一套全自动的计算机控制设备，用于确定硅中的掺杂分布。掺杂是通过电阻率和霍尔测量确定的，该测量与随后去除受控薄层材料有关。阳极氧化和随后通过化学蚀刻进行的氧化物剥离已被选为最可控制的剥离技术。自动检测电学测量值，并绘制出载流子浓度和迁移率值与深度的关系图。提供了一组经验参数，以配合文献中提供的P，B和As的迁移浓度数据以及分析表达式。以这种方式，可以容易地与在轮廓分析操作中检测到​​的实验值进行比较，并且可以获得关于晶格缺陷存在的信息。还介绍了一种用于样品制备的新技术，该技术使用超声波钻孔机台面蚀刻van der Pauw图案。使用此设备，电活动分析的关键和浪费时间的操作成为标准分析的有力方法。

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