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Two‐frequency method for measuring impurity profiles

机译:测量杂质分布的双频方法

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A new method of plotting the impurity profile is described. It makes efficient use of the advantage of an operational amplifier and the nonlinearity of the junction capacitance in a semiconductor. When two small ac signals are applied to the inverting input terminal of the operational amplifier, intermodulation arises due to the nonlinearity of the junction capacitance inserted in the feedback loop, at the time the reverse bias voltage to the junction can be supplied from the noninverting input terminal; then the signals concerning both the depletion layer width x and the impurity concentration N (x) arise at the output terminal of the operational amplifier. By detecting each of the amplified input signals and the difference‐frequency ones corresponding to x and N (x), respectively, the relation of x-N (x) can be plotted easily, at the same time, in a short time, and at a low cost.
机译:描述了一种绘制杂质分布图的新方法。它有效地利用了运算放大器的优势和半导体中结电容的非线性。当两个小的交流信号施加到运算放大器的反相输入端时,由于插入反馈环路中的结电容的非线性,会产生互调,此时可以从同相输入端向结提供反向偏置电压终奌站;然后,有关耗尽层宽度x和杂质浓度N(x)的信号出现在运算放大器的输出端。通过分别检测每个放大的输入信号和分别对应于x和N(x)的差频信号,可以轻松,同时,在短时间内和在a处绘制xN(x)的关系。低成本。

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