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Termowizyjne badania spiralnych cewek scalonych w technologiach krzemowych

机译:硅技术中螺旋集成线圈的热成像研究

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摘要

Spiralne cewki scalone stanowią szczególny przypadek połączenia we-wnątrzukładowego w układach scalonych. Pozwalają na bezpośrednią integrację indukcyjności w strukturach półprzewodnikowych, w standardowych technologiach CMOS/BiCMOS, bez konieczności wykonywania dodatkowych procesów technologicznych, dodatkowych fotomasek, a tym samym, bez zwiększania kosztów produkcji. W niniejszym artykule przedstawiono wyniki badań termowizyjnych spiralnych pojedynczej spiralnej cewki scalonej w technologii krzemowej i ich porównanie z wynikami symulacji.%Spiral inductors are a special case of on-chip interconnects used in integrated circuits. They enable direct integration of inductances in semiconductor structures, in standard CMOS/BiCMOS technologies, without the need of additional technological processes, additional photomasks, thus without increase in ICs production costs. Because of their relatively large sizes compared to other elements integrated on a semiconductor wafer, spiral inductors can became a source of non negligible interferences for neighboring circuits located on the same semiconductor structure. According to the Joule-Lenz law, a current flowing through a metal produces heat. A spiral inductor is a metal interconnect conveying current, thus one can expect that the current flowing through the spiral will heat it, changing its series resistance and changing one of the inductor key design parameters - its quality factor Q. The neighboring circuits can also be affected. So far there have hardly been any publications dealing with that subject. The goal of the research was to investigate the thermal behavior of silicon integrated spiral inductors under current stress. In the introduction, an overview of spiral inductors is presented, including their typical geometries, dimensions and applications. The second section of the paper discusses the problems of silicon integrated spiral inductor modeling. Next, in the third section there are given the results of temperature measurements of one of the spiral inductors integrated in test circuits. A MWIR camera with a cooled InSb 640×512 pixel detector matrix was used. The measurements are compared with simulation results. The fourth section presents the conclusions drawn from the measurement results. The measurement setup used allowed the imaging of a single spiral inductor, while only a general view of the test circuit was obtained form the previous results, without the possibility to discern a single, individual spiral inductor. It is shown that there is a good agreement between the simulations and measurements. Further investigations will be required to overcome the problems encountered during the measurements, such as influence of the on-wafer probes, the order of magnitude emissivity difference between the silicon substrate and aluminum interconnects. More complicated spiral geometries will have to be investigated, especially micromachined spiral inductors, in which the inductor is suspended, and typically connected to the rest of the integrated circuit only with 4 narrow SiO_2 made bridges.
机译:螺旋集成线圈是集成电路中系统内连接的一种特殊情况。它们允许在标准CMOS / BiCMOS技术中将电感直接集成在半导体结构中,而无需其他工艺流程,附加光掩模,因此无需增加生产成本。本文介绍了硅技术中单个螺旋线圈的螺旋热成像测试结果,并将其与仿真结果进行了比较。%螺旋电感器是集成电路中片上互连的一种特殊情况。它们使电感可以直接集成在标准CMOS / BiCMOS技术中的半导体结构中,而无需额外的工艺流程,额外的光掩模,因此不会增加IC的生产成本。由于与集成在半导体晶圆上的其他元件相比,螺旋电感器的尺寸相对较大,因此螺旋电感器可能成为位于同一半导体结构上的相邻电路不可忽略的干扰源。根据焦耳-伦兹定律,流过金属的电流会产生热量。螺旋电感器是一种传输电流的金属互连,因此可以预期,流过螺旋的电流会对其加热,从而改变其串联电阻并更改电感器关键设计参数之一-其品质因数Q。相邻电路也可以受到影响。到目前为止,几乎没有任何出版物涉及该主题。该研究的目的是研究硅集成螺旋电感器在电流应力下的热行为。在介绍中,介绍了螺旋电感器的概述,包括其典型的几何形状,尺寸和应用。本文的第二部分讨论了硅集成螺旋电感器建模的问题。接下来,在第三部分中,给出了集成在测试电路中的一个螺旋电感器的温度测量结果。使用具有冷却的InSb 640×512像素检测器矩阵的MWIR摄像机。将测量结果与仿真结果进行比较。第四部分介绍了从测量结果得出的结论。使用的测量设置允许对单个螺旋电感器进行成像,而从以前的结果中只能获得测试电路的总体视图,而无法辨别单个单个螺旋电感器。结果表明,仿真和测量之间有很好的一致性。将需要进一步的研究来克服在测量过程中遇到的问题,例如晶圆上探针的影响,硅衬底和铝互连之间的辐射率差的数量级。必须研究更复杂的螺旋几何形状,尤其是微机械螺旋电感器,该电感器悬挂在其中,并且通常仅用4个窄SiO_2制成的桥连接到集成电路的其余部分。

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