Discrete Superposition of Charges in a Galvanically Isolated Power Circuit when Generating Test Voltage Pulses

A. B. Ershov; V. Ya. Khorol’skii; A. V. Efanov; V. N. Shemyakin

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Discrete Superposition of Charges in a Galvanically Isolated Power Circuit when Generating Test Voltage Pulses

机译：生成测试电压脉冲时，电隔离电源电路中电荷的离散叠加

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摘要

It has been demonstrated controlling maximum permissible current overloads and reverse currents of semiconductor power devices using a single device is practically impossible and the actual amplitude–time dependences of permissible current overloads should be determined by a computational analytical method. A new method for generating single and repeating heavy voltage sinusoidal pulses based on application of the principle of discrete superposition of charges in a galvanically isolated control circuit has been presented. A diagram of discrete superposition of charges in a galvanically isolated power circuit has been presented. Distinguishing characteristics of its determination have been shown.

机译：已经证明，使用单个设备控制半导体功率设备的最大允许电流过载和反向电流实际上是不可能的，并且允许电流过载的实际幅度-时间依赖性应通过计算分析方法来确定。提出了一种基于电隔离控制电路中电荷离散离散叠加原理的单重脉冲正弦脉冲产生方法。提出了电隔离电源电路中电荷的离散叠加图。已经显示出其确定的区别特征。

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来源
《Russian electrical engineering》 |2018年第7期|413-416|共4页
作者
A. B. Ershov; V. Ya. Khorol’skii; A. V. Efanov; V. N. Shemyakin;
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作者单位

Stavropol State Agrarian University;

Stavropol State Agrarian University;

Stavropol State Agrarian University;

Stavropol State Agrarian University;

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收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
semiconductor power devices; control of parameters; permissible current overloads; reverse voltage pulse; discrete superposition of charges;

机译：半导体功率器件;参数控制;允许的电流过载;反向电压脉冲;电荷的离散叠加;

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Discrete Superposition of Charges in a Galvanically Isolated Power Circuit when Generating Test Voltage Pulses

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