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首页> 外文期刊>Russian electrical engineering >RADIATIVE REGULATION OF THE LIFETIME OF NONEQUILIBRIUM CHARGE CARRIERS IN SEMICONDUCTOR POWER EQUIPMENT
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RADIATIVE REGULATION OF THE LIFETIME OF NONEQUILIBRIUM CHARGE CARRIERS IN SEMICONDUCTOR POWER EQUIPMENT

机译:半导体电力设备中非平衡电荷载体寿命的辐射调节。

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摘要

Improving the dynamic properties of semiconductor power equipment (SPE) and obtaining the optimal parameter set entails regulated reduction in the lifetime τ of nonequilibrium charge carriers (NCC). Practically all methods of reducing the NCC lifetime in silicon single crystals are based on the creation of additional channels of charge-carrier recombination through deep centers in the band gap that are introduced in the crystal either by diffusion of the corresponding atoms or by irradiating the semiconductor with a beam of high-energy particles.
机译:改善半导体功率设备(SPE)的动态特性并获得最佳参数集,必须有规律地减少非平衡电荷载流子(NCC)的寿命τ。几乎所有降低硅单晶NCC寿命的方法都基于通过带隙深处中心产生附加的载流子复合通道的方法,该深处中心是通过相应原子的扩散或通过照射半导体而引入到晶体中的一束高能粒子。

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