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首页> 外文期刊>Science of advanced materials >Microwave Annealing Effects on Spin-Coated Al Doped ZnO Transparent Conducting Oxides Thin Films
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Microwave Annealing Effects on Spin-Coated Al Doped ZnO Transparent Conducting Oxides Thin Films

机译：微波退火对旋涂铝掺杂ZnO透明导电氧化物薄膜的影响

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摘要

The coexistence of electrical conductivity and optical transmittance is very important issue for the transparent conducting oxide applications. Low temperature annealing process has significant meaning for the compatibility with other electronic materials and devices. Microwave annealing process was proposed to enhance the electrical conductivity properties. 1 similar to 2.5 mole% Al dopant was employed to ZnO thin films to improve the electrical and optical properties. Spin coating process was employed to fabricate the transparent thin films. Microwave annealing process was performed to enhance the electrical and optical properties. Microwave annealed Al doped ZnO thin films showed decreased sheet resistance and higher figure of merits.
机译：对于透明导电氧化物应用来说，电导率和光透射率的共存是非常重要的问题。低温退火工艺对于与其他电子材料和设备的兼容性具有重要意义。提出了微波退火工艺以提高导电性能。将类似于2.5摩尔％Al掺杂剂的1用于ZnO薄膜以改善电学和光学性能。采用旋涂工艺来制造透明薄膜。进行微波退火工艺以增强电学和光学性能。微波退火铝掺杂ZnO薄膜显示出降低的薄层电阻和较高的品质因数。

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