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首页> 外文期刊>Science of advanced materials >A Close Investigation Into the Microstructure of SiO2-Doped Ge2Sb2Te5 as a Phase-Changing Material for Nonvolatile Memory Application
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A Close Investigation Into the Microstructure of SiO2-Doped Ge2Sb2Te5 as a Phase-Changing Material for Nonvolatile Memory Application

机译：SiO2掺杂的Ge2Sb2Te5作为相变材料用于非易失性存储器的微观结构的深入研究

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摘要

Ge2Sb2Te5 (GST) is widely employed as a functional material for phase-change random-access memory and SiO2 doping has been reported to have a favorable effect on its characteristics for memory operations. This study is devoted to the formation mechanism of layered structures in SiO2-doped GST (SGST)-a phasechange material with a high thermal efficiency due to its reduced thermal conductivity-with a particular focus on the microstructure of SGST thin films. Transmission electron microscopy and X-ray diffraction results demonstrate that LSs in SGST stem from an anisotropic driving force. Stress measurements performed during cyclic annealing clearly verify that the increase in tensile stress due to the presence of SiO2 gives rise to an anisotropic driving force in the direction parallel to the substrate. Increased stress by SiO2 doping is therefore shown to be essential to the formation of a layered microstructure.
机译：Ge2Sb2Te5（GST）被广泛用作相变随机存取存储器的功能材料，据报道，SiO2掺杂对其存储操作的特性具有有利影响。这项研究致力于在SiO2掺杂的GST（SGST）中形成层状结构的机理-SGST是一种由于热导率降低而具有高热效率的相变材料-特别关注SGST薄膜的微观结构。透射电子显微镜和X射线衍射结果表明SGST中的LSs是由各向异性驱动力引起的。在循环退火过程中进行的应力测量清楚地证明了由于SiO2的存在引起的拉伸应力的增加在平行于基板的方向上产生了各向异性驱动力。因此，显示出通过SiO 2掺杂增加的应力对于形成层状微结构是必不可少的。

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