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首页> 外文期刊>Science of advanced materials >Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices
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Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices

机译：氮化镓电子器件肖特基电极金属氮化物的合成与应用

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摘要

To achieve thermally-stable Schottky electrode on gallium nitride (GaN) electron devices for gate-first process and high-temperature devices, Titanium nitride (TiN) film was synthesised by magnetron reactive sputtering as the Schottky contact on n-GaN and AlGaN/GaN heterostructure field-effect transistors (HFETs). To reduce the sheet resistance, a cap layer of W/Au was deposited on the films. The ideality factor and Schottky barrier height (SBH) of the circular Schottky contact on n-GaN were 1.07 and 0.59 eV, respectively. GaN Schottky diodes and AlGaN/GaN HFETs were fabricated by annealing the Ohmic contact (Ti/Al/Ti/Au) and Schottky contact simultaneously. No obvious change was observed in the forward characteristics of the GaN Schottky diode, when the sample was annealed at 850 degrees C for 1 min. For the AlGaN/GaN HFETs which were annealed at 850 degrees C, the HFETs operated very well when they were annealed for 1 or 3 min. The TiN/W/Au Schottky contact on GaN-based electron devices is thermally stable and can be a possible candidate of Schottky material that endures a high-temperature process.
机译：为了在先栅极工艺和高温器件的氮化镓（GaN）电子器件上实现热稳定的肖特基电极，通过磁控反应溅射在n-GaN和AlGaN / GaN上形成肖特基接触来合成氮化钛（TiN）膜异质结构场效应晶体管（HFET）。为了降低薄层电阻，在膜上沉积W / Au的覆盖层。 n-GaN上的圆形肖特基接触的理想因子和肖特基势垒高度（SBH）分别为1.07和0.59 eV。通过同时退火欧姆接触（Ti / Al / Ti / Au）和肖特基接触来制造GaN肖特基二极管和AlGaN / GaN HFET。当样品在850摄氏度下退火1分钟时，GaN肖特基二极管的正向特性没有观察到明显变化。对于在850摄氏度下退火的AlGaN / GaN HFET，当HFET退火1或3分钟时，它们的运行效果非常好。 GaN基电子器件上的TiN / W / Au肖特基接触具有热稳定性，并且可能是耐高温工艺的肖特基材料的候选材料。

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