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首页> 外文期刊>Science of advanced materials >Two-Dimensional Bi_2Te_3 Nanosheets with Enhanced Electrical and Dielectric Properties: Scope of Novel Storage of Renewable Energy in Nanoelectronics
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Two-Dimensional Bi_2Te_3 Nanosheets with Enhanced Electrical and Dielectric Properties: Scope of Novel Storage of Renewable Energy in Nanoelectronics

机译：具有增强的电和介电特性的二维Bi_2Te_3纳米片：纳米电子中可再生能源的新型存储范围

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摘要

Two-dimensional (2D) nanosheets, which acquire atomic or molecular thickness and infinite planar lengths, are regarded as the thinnest resourceful nanomaterials. The recent magnification of route for manipulating inorganic nanosheets has provided new prospective applications for various 2D systems; much marvelous functionality such as high storage capacity has been discovered. Though, Bismuth telluride is a semiconductor, and electronic technology also requires insulators, which are essential for many devices such as memories, capacitors, and gate dielectrics. Inorganic nanosheets have thus increasingly attracted fundamental much research interest because they have the potential to be used as dielectric alternatives in next-generation "nanoelectronics." Bi_2Te_3 nanosheets of lateral dimensions ～2 μm with a thickness of few quintuple layers are synthesized and its electrical and dielectric analysis are carried out. Herein, we report the progress made in the dielectric properties of Bi_2Te_3 nanosheets, highlighting the functionalities in present and future nanoelectronics scopes. Bi_2Te_3 nanosheets with high dielectric constant (ε' ～ 6-61) and low dielectric loss (tan δ ～ 0.09-0.58) confirms that capacitors of capacity (C ～ 4-45 pF) may be fabricated which will be useful for storage of renewable energy in nanoelectronics. Bi_2Te_3 thin film capacitors can also be fabricated by the assembly of nanosheets which will be great applications in "nanoelectronics."
机译：获得原子或分子厚度以及无限平面长度的二维（2D）纳米片被认为是最薄的资源丰富的纳米材料。最近处理无机纳米片的方法的放大为各种2D系统提供了新的预期应用。已经发现了许多出色的功能，例如高存储容量。虽然，碲化铋是一种半导体，电子技术也需要绝缘体，这对于许多设备（例如存储器，电容器和栅极电介质）都是必不可少的。无机纳米片因此越来越吸引了基本的研究兴趣，因为它们有潜力在下一代“纳米电子”中用作电介质替代品。合成了Bi_2Te_3纳米片，其横向尺寸约为2μm，具有几层五层的厚度，并进行了电学和介电分析。在这里，我们报告Bi_2Te_3纳米片的介电性能方面取得的进展，重点介绍了当前和未来纳米电子范围内的功能。具有高介电常数（ε'〜6-61）和低介电损耗（tanδ〜0.09-0.58）的Bi_2Te_3纳米片证实可以制造容量（C〜4-45 pF）的电容器，这对于可再生能源的存储很有用纳米电子学中的能量。 Bi_2Te_3薄膜电容器也可以通过纳米片的组装来制造，这将在“纳米电子”领域获得巨大的应用。

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