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首页> 外文期刊>Science of advanced materials >Effect of Annealing on the Characteristics of Nanocrystalline ZnO Thin Films
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Effect of Annealing on the Characteristics of Nanocrystalline ZnO Thin Films

机译：退火对纳米ZnO薄膜特性的影响

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摘要

Nanocrystalline ZnO thin films with homogenous surface morphology and particle size were grown on p-type silicon (100) substrate by thermal evaporation method. The films were subsequently annealed at different temperatures for studying the effect of thermal treatment on the surface morphology of the films. The study of atomic force microscope (AFM) images reveals that the film comprises uniform pyramid-shaped micro- and nano-structures. The optical band gap of ZnO thin film was estimated to be 3.18 eV. The X-ray diffractometer (XRD) studies re-confirm that the deposited film has a hexagonal wurtzite structure. The study also suggests that there is an intermediate post annealing temperature at which the deposited ZnO film exhibit best surface characteristics. The results of the study can be used as a guideline for growing smooth and homogenous ZnO films, which are suited for electronic/optoelectronic applications.
机译：通过热蒸发法在p型硅（100）衬底上生长了具有均匀表面形貌和粒径的纳米ZnO薄膜。随后将膜在不同温度下退火以研究热处理对膜的表面形态的影响。对原子力显微镜（AFM）图像的研究表明，该膜包含均匀的金字塔形微结构和纳米结构。 ZnO薄膜的光学带隙估计为3.18eV。 X射线衍射仪（XRD）的研究再次证实了沉积膜具有六方纤锌矿结构。研究还表明，存在一个中间的退火后温度，在该温度下沉积的ZnO膜表现出最佳的表面特性。研究结果可以用作生长光滑且均匀的ZnO薄膜的指南，该薄膜适用于电子/光电应用。

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