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首页> 外文期刊>Science in China. Series G, Physics, Mechanics & Astronomy >Study on the p-type QWIP-LED device
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Study on the p-type QWIP-LED device

机译：p型QWIP-LED器件的研究

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摘要

A p-type quantum well infrared photodetector (QWIP) integrated with a light-emitting diode (LED) (named QWIP-LED) was fabricated and studied. The infrared photo-response spectrum was obtained from the device resistance variation and the near-infrared photo-emission intensity variation. A good agreement between these two spectra was observed, which demonstrates that the long-wavelength infrared radiation around 7.5 μm has been transferred to the near-infrared light at 0.8 μm by the photo-electronic process in the QWIP-LED structure. Moreover, the experimentally observed infrared response wavelength is in good agreement with the theoretical calculation value of 7.7 μm. The results on the upconversion of the infrared radiation will be very useful for the new infrared focal plane array technology.
机译：制造并研究了集成有发光二极管（LED）的p型量子阱红外光电探测器（QWIP-LED）。从器件电阻变化和近红外光发射强度变化获得红外光响应光谱。观察到这两个光谱之间的良好一致性，这表明通过QWIP-LED结构中的光电过程已将大约7.5μm的长波长红外辐射转移到0.8μm的近红外光。此外，实验观察到的红外响应波长与7.7μm的理论计算值非常吻合。红外辐射上转换的结果对于新的红外焦平面阵列技术将非常有用。

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