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首页> 外文期刊>Science and Technology of Advanced Materials >Spin-related transport in one-dimensional conductors made at high-in content InGaAs/InAlAs hetero-junctions
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Spin-related transport in one-dimensional conductors made at high-in content InGaAs/InAlAs hetero-junctions

机译：高含量InGaAs / InAlAs异质结制成的一维导体中的自旋相关输运

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摘要

Results of spin-related transport observed in various one-dimensional (1D) samples made at high In-content InGaAs/InAlAs modulation-doped hetero-junctions are reported. This type of material is interesting especially from the view point of non-magnetic semiconductor spintronics, since it contains two-dimensional electron gas (2DEG) which reveals large spin-orbit coupling constant (α) as well as very high electron mobility (μ_e) at low temperatures. 1D structures studied here are diffusive narrow wires (width, w) and quantum point contacts (QPCs) as typical example of ballistic transport regime. In the long diffusive wires with a variety of width, α is found to remain unchanged when w > 2 μm. But in the diffusive wires with side-gate (the width of the wire can thus be controlled by the side-gate voltage), α is enhanced by applying negative voltage to the side gate. This is probably due to that the side-gate voltage has enhanced asymmetric lateral electric field perpendicular to the moving direction of 2DEG. In the QPC samples defined by the wire and the finger side-gate, conductance quantization in unit of 0.5(2e~2/h) is confirmed. This might be caused by the formation of 'spin-related Tomonaga-Luttinger wire', which encourages spin-polarized transport in such an ideal conductor. Finally, we propose several quantum information processing devices based on the spin-FET, that could construct a solid-state qubit and quantum computation devices and circuits.
机译：报告了在高In含量InGaAs / InAlAs调制掺杂异质结制成的各种一维（1D）样品中观察到的自旋相关输运结果。从非磁性半导体自旋电子学的角度来看，这种材料特别有趣，因为它包含二维电子气（2DEG），该电子气显示出大的自旋轨道耦合常数（α）以及非常高的电子迁移率（μ_e）在低温下。这里研究的一维结构是扩散的细线（宽度，w）和量子点接触（QPC），这是弹道运输制度的典型示例。在具有各种宽度的长扩散线中，发现当w> 2μm时，α保持不变。但是在带有侧栅的扩散线中（线的宽度因此可以由侧栅电压控制），通过向侧栅施加负电压来增加α。这可能是由于侧栅电压具有增强的垂直于2DEG运动方向的不对称横向电场。在由导线和手指侧门限定的QPC样品中，确认以0.5（2e〜2 / h）为单位的电导量化。这可能是由于形成了“与自旋有关的Tomonaga-Luttinger导线”引起的，这种导线鼓励在这种理想导体中进行自旋极化传输。最后，我们提出了几种基于自旋FET的量子信息处理设备，它们可以构成固态量子比特和量子计算设备及电路。

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