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Confinement of one-dimensional electrons in dimer row segments at Ge/Si(001) surfaces

机译:一维电子在Ge / Si(001)表面的二聚体行段中的约束

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During the initial growth, Si(001) surfaces were covered by thin Ge wetting layers. At the wetting layer surfaces, Ge atoms were reconstructed into dimers, which were aligned along the [110] direction to form one-dimensional (1D) 'dimer rows'. In addition, the dimer rows were partitioned by dimer vacancy lines at the Ge/Si(001) surfaces. As a result, the surfaces were covered spontaneously by an array of 1D dimer row segments. Scanning tunneling microscope images demonstrated that the 1D free-electrons in the dimer rows are confined in each segment and form an ultra-high density array of 1D quantum wells at the surfaces.
机译:在初始生长期间,Si(001)表面被薄薄的Ge润湿层覆盖。在润湿层表面,Ge原子被重建为二聚体,沿[110]方向排列以形成一维(1D)“二聚体行”。另外,二聚体行由Ge / Si(001)表面上的二聚体空位线隔开。结果,表面被一维二聚体行节段的阵列自然覆盖。扫描隧道显微镜图像显示,二聚体行中的一维自由电子被限制在每个段中,并在表面形成一维超高密度的一维量子阱阵列。

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