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首页> 外文期刊>Science and Technology of Advanced Materials >Diffusion barrier property of TiN and TiN/Al/TiN films deposited with FMCVD for Cu interconnection in ULSI
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Diffusion barrier property of TiN and TiN/Al/TiN films deposited with FMCVD for Cu interconnection in ULSI

机译：FMCVD沉积的TiN和TiN / Al / TiN薄膜的扩散阻挡特性，用于ULSI中的铜互连

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摘要

Flow modulation chemical vapor deposition (FMCVD) with titanium tetrachloride (TiCl_4) and ammonia (NH_3) is effective for depositing titanium nitride (TiN) films with conformal morphology, good step coverage, low electrical resistivity, and low chlorine residual contamination. It means that FMCVD TiN film is a good candidate of diffusion barriers for copper interconnection technology in ULSI. But the diffusion barrier property of FMCVD TiN film against Cu diffusion has not been confirmed. So, firstly, we deposited Cu (100 nm)/FMCVD TiN (25 nm)/Si multilayer films and investigated the thermal stability of Cu/TiN/Si structure. Vacuum annealing was done at 400, 500, 550 and 600℃. For films annealed for 30 min at 400℃, Cu diffused through the TiN layer and formed copper silicides on the surface of Si substrates. Therefore, FMCVD films formed under such conditions are unsatisfactory diffusion barriers. To enhance the diffusion barrier property of FMCVD TiN films, we used sequential deposition to introduce a monolayer of Al atoms between two TiN films. Etch-pit tests showed that for TiN films with Al interlayer, Cu diffusion through the barrier occurred at 500℃ and that is 100℃ higher than TiN film without Al interlayer. Al atoms formed AlO_x with oxygen atoms present in the TiN films as impurities, and fill up the grain boundaries of TiN film, thereby blocking the diffusion of Cu atoms.
机译：用四氯化钛（TiCl_4）和氨水（NH_3）进行的流调制化学气相沉积（FMCVD）可有效沉积具有共形形态，良好台阶覆盖范围，低电阻率和低氯残留污染的氮化钛（TiN）膜。这意味着FMCVD TiN膜是用于ULSI中铜互连技术的扩散势垒的良好候选者。但是，尚未确认FMCVD TiN膜对Cu扩散的扩散阻挡性。因此，首先，我们沉积了Cu（100 nm）/ FMCVD TiN（25 nm）/ Si多层膜，并研究了Cu / TiN / Si结构的热稳定性。在400、500、550和600℃下进行真空退火。对于在400℃退火30分钟的薄膜，Cu扩散通过TiN层并在Si衬底表面形成硅化铜。因此，在这种条件下形成的FMCVD膜不是令人满意的扩散阻挡层。为了增强FMCVD TiN膜的扩散阻挡性能，我们使用顺序沉积在两个TiN膜之间引入Al原子的单层。腐蚀坑测试表明，对于具有Al中间层的TiN薄膜，Cu通过势垒的扩散发生在500℃，比没有Al中间层的TiN薄膜高100℃。 Al原子与存在于TiN膜中的氧原子作为杂质形成AlO_x，并填充TiN膜的晶界，从而阻止Cu原子的扩散。

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