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首页> 外文期刊>Science and Technology of Advanced Materials >Nanoscale epitaxial growth control of oxide thin films by laser molecular beam epitaxy―towards oxide nanoelectronics
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Nanoscale epitaxial growth control of oxide thin films by laser molecular beam epitaxy―towards oxide nanoelectronics

机译：激光分子束外延向氧化物纳米电子学控制氧化物薄膜的纳米外延生长

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摘要

The nanoscale growth control of oxide thin films, such as ferroelectric and magnetic materials, were explored by a novel technique based on nanoscale substrate engineering as well as atomic layer control via laser molecular beam epitaxy (laser-MBE). Atomic-scale analysis of the terminating layer of perovskite oxide films was performed by in situ coaxial impact-collision ion scattering spectroscopy. The novel heteroepitaxies that could be attained were: (1) the termination-regulated molecular layer-by-layer epitaxy of BaTiO_3 and La_(0.7)Sr_(0.3)MnO_3 thin films and (2) the step-decoration epitaxy resulting in the nanowire or nanodot structures of magnetic oxides such as (Mn, Zn) ferrite on ultrasmooth sapphire substrates with straight atomic steps.
机译：通过一种基于纳米级衬底工程以及通过激光分子束外延（laser-MBE）进行原子层控制的新技术，探索了诸如铁电和磁性材料等氧化物薄膜的纳米级生长控制。钙钛矿氧化物薄膜终止层的原子尺度分析是通过原位同轴碰撞碰撞离子散射光谱法进行的。可以实现的新型异质外延性是：（1）BaTiO_3和La_（0.7）Sr_（0.3）MnO_3薄膜的端接调控分子逐层外延，以及（2）形成纳米线的分步装饰外延或具有直原子步长的超光滑蓝宝石衬底上的磁性氧化物（如（Mn，Zn）铁氧体）的纳米点结构。

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