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Magnetic properties of weak itinerant ferromagnetic ζ-Fe_2N film

机译：弱迭代铁磁ζ-Fe_2N薄膜的磁性

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摘要

We have studied magnetic properties of ζ-Fe_2N film deposited onto surface-oxidized Si (100) substrates by reactive dc magnetron sputtering with an argon-nitrogen atmosphere. At the temperature less than 120 K, the magnetic moment of the 120 nm-thick ζ-Fe_2N film is hard to be saturated at magnetic fields up to 50 kOe, and the magnetic moment is weak. The inverse susceptibility linearly increases as the temperature increases between 65 and 160 K, and the change of the inverse susceptibility obeys the Curie-Weiss law. From the results of magnetization measurements, the magnetic parameter of the Curie temperature, the spontaneous magnetic moment at 0 K and the effective magnetic moment can be estimated to be 35 +- 2.5 K, 0.028 μ_B/iron atom and 0.70 μ_B/iron atom, respectively. These parameters suggest that the ζ-Fe_2N film is in the weak itinerant electron ferromagnetic state. These parameters can be also explained by self-consistently renormalization (SCR) theory.
机译：我们已经研究了在氩氮气氛下通过反应性直流磁控溅射沉积在表面氧化的Si（100）衬底上的ζ-Fe_2N薄膜的磁性。在低于120 K的温度下，厚度为120 nm的ζ-Fe_2N薄膜的磁矩在高达50 kOe的磁场下很难饱和，并且磁矩很弱。随着温度在65至160 K之间升高，逆磁化率呈线性增加，并且逆磁化率的变化服从居里-魏斯定律。根据磁化强度的测量结果，居里温度，0 K时的自发磁矩和有效磁矩的磁参数可以估计为35 +-2.5 K，0.028μB/铁原子和0.70μB/铁原子，分别。这些参数表明ζ-Fe_2N薄膜处于弱迭代电子铁磁状态。这些参数也可以通过自洽重归一化（SCR）理论进行解释。

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