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首页> 外文期刊>Science and Technology of Advanced Materials >Morphological characterization of porous InP superlattices
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Morphological characterization of porous InP superlattices

机译：多孔InP超晶格的形貌表征

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摘要

Porous superlattices n-type (100) InP are produced electrochemically on by changing the applied current or potential periodically in 1 M HCl + 1 M HNO_3 solutions. The superlattice consists of stack of alternating two layers with various morphologies and porosities. The plan-view morphologies of the top surface of superlattice were almost same, and the pore size was varied in the nano-order range. On the other hand, the cross-sectional morphologies depend strongly on the electrochemical condition. For low applied currents or potentials such as 10 mA or 1.5 V_(Ag/AgCl), respectively, porous layers with a facet-like structure were formed. The size of each facet did not change with the etching time, but the number of the facets increased with time. For high currents or potentials such as 50, 100 mA or 3 V_(Ag/AgCl), respectively, a tree-like structure with random and/or tangled branches was observed. At a still higher potential of 5 V_(Ag/AgCl), the porous layer exhibited fairly regular array of straight pores. Therefore, it is found that the morphology of the porous layer can be highly controlled by the applied current or potential.
机译：通过在1 M HCl + 1 M HNO_3溶液中定期改变施加的电流或电势，可电化学生成n型（100）多孔超晶格InP。超晶格由具有不同形态和孔隙率的交替两层的堆叠组成。超晶格顶表面的平面形态几乎相同，并且孔径在纳米级范围内变化。另一方面，横截面形态在很大程度上取决于电化学条件。对于低施加的电流或电势，例如分别为10 mA或1.5 V_（Ag / AgCl），形成了具有小平面状结构的多孔层。每个刻面的尺寸不随蚀刻时间而变化，但是刻面的数量随时间增加。对于高电流或高电位，例如分别为50、100 mA或3 V_（Ag / AgCl），观察到具有随机和/或缠结分支的树状结构。在5 V_（Ag / AgCl）的更高电势下，多孔层表现出相当规则的直孔阵列。因此，发现可以通过施加的电流或电势高度控制多孔层的形态。

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