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首页> 外文期刊>Science and Technology of Advanced Materials >Semiconductor properties of passive films formed on sputter-deposited Fe-18Cr alloy thin films with various additive elements
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Semiconductor properties of passive films formed on sputter-deposited Fe-18Cr alloy thin films with various additive elements

机译：具有各种添加元素的溅射沉积Fe-18Cr合金薄膜上形成的钝化膜的半导体性能

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摘要

The semiconductor properties of passive films formed on an Fe-18Cr alloy with various additive elements in a borate buffer solution were studied using electrochemical impedance spectroscopy and photoelectrochemical response. The photocurrent was plotted as a photoelectrochemical action spectrum that could be separated into two components, which were mainly derived from Cr oxide (E_g = 3.4 eV) and Cr hydroxide (E_g = 2.4 eV). The band gap energy, E_g, of each component was almost constant, independent of the species and amount of additive elements. The photoelectrochemical response showed positive photocurrent for most potential in the passive region, which indicates that the passive film behaved as an n-type semiconductor. In addition, the Mott-Schottky plot of the capacitance showed positive slope, which also means that the passive films behaved as an n-type semiconductor. The donor density of the passive films, which can be estimated by the Mott-Schottky plots, changes depending on the film formation potentials and a variety of additives.
机译：利用电化学阻抗谱和光电化学反应研究了在硼酸盐缓冲溶液中具有各种添加元素的Fe-18Cr合金上形成的钝化膜的半导体性能。将光电流绘制为光电化学作用谱，可将其分为两个部分，主要来自氧化铬（E_g = 3.4 eV）和氢氧化铬（E_g = 2.4 eV）。每个组分的带隙能量E_g几乎恒定，与添加元素的种类和数量无关。光电化学反应在无源区域中对大多数电位显示正光电流，这表明无源膜表现为n型半导体。此外，电容的Mott-Schottky图显示正斜率，这也意味着无源膜表现为n型半导体。可以通过Mott-Schottky曲线估算的无源薄膜的施主密度随成膜电势和各种添加剂的变化而变化。

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