Development of Super High Brightness Infrared LEDs

Hiroyuki KITABAYASHIl; Kuniaki ISHIHARA; oshisumi KAWABATA; Hideki MATSUBARA; Ken-ichi MIYAHARA; Tomonori MORISHITA; So TANAKA

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Development of Super High Brightness Infrared LEDs

机译：超高亮度红外LED的开发

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We have developed super high brightness infrared light emitting diodes (LEDs). The LEDs at the wavelength of 870 nm reached record-breaking output power of 9.8 mW, which was more than 1.3 times higher than the evaluated value of the conventional 850 nm LEDs. These super high brightness infrared LEDs can be fabricated without using time- and cost-consuming wafer bonding technologies such as metal bonding and glue bonding. They are also free from reliability issues possibly arising from the bonding interfaces. The new super high brightness infrared LEDs are promising as a light source for future applications such as high sensitivity sensors. 【keyworks】 infrared light emitting diode, multiple-quantum well

机译：我们已经开发了超高亮度红外发光二极管（LED）。波长为870 nm的LED达到了创纪录的9.8 mW的输出功率，比传统850 nm LED的评估值高1.3倍以上。这些超高亮度红外LED无需使用费时费钱的晶圆键合技术（如金属键合和胶合键合）即可制造。它们也没有粘接接口可能引起的可靠性问题。新型超高亮度红外LED有望作为未来应用（例如高灵敏度传感器）的光源。【关键技术】红外发光二极管，多量子阱

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《SEI Technical Review》 |2011年第72期|p.86-89|共4页
作者
Hiroyuki KITABAYASHIl; Kuniaki ISHIHARA; oshisumi KAWABATA; Hideki MATSUBARA; Ken-ichi MIYAHARA; Tomonori MORISHITA; So TANAKA;
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作者单位

Ph. D.Assistant General ManagerPower Device Development DivisionHe is engaged in the research and devel-opment of semiconductor devices;

De.Eng Compound Semiconductor Materials Division;

Power Device Development Division;

Assistant General Manager Compound Semiconductor Materials Division;

Sumiden Semiconductor Materials Co., Ltd. T. MORISHITA;

Sumiden Semiconductor Materials Co., Ltd;

Ph. D.Manager Power Device Development Division;

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机译：超高亮度红外LED的开发
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Development of Super High Brightness Infrared LEDs

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