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首页> 外文期刊>Semiconductor science and technology >Interdot carrier and spin dynamics in a two-dimensional high-density quantum-dot array of InGaAs with quantum dots embedded as local potential minima
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Interdot carrier and spin dynamics in a two-dimensional high-density quantum-dot array of InGaAs with quantum dots embedded as local potential minima

机译：InGaAs二维高密度量子点阵列中的点间载流子和自旋动力学，量子点嵌入为局部势极小值

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摘要

Interdot carrier and spin dynamics were studied in a two-dimensional array of high-density small quantum dots (SQDs) of InGaAs with an average diameter of 16 nm and a sheet density of 1.2 x 10(11) cm(-2), in which 24 nm diametric large QDs (LQDs) were embedded as local potential minima. We observed a delayed photoluminescence (PL) rise from the lower-lying LQD states and a considerably faster PL decay from the higher-lying SQD states, indicating carrier transfer from the two-dimensionally coupled SQDs into the LQDs. In addition, inverse carrier tunneling from the LQDs into the SQDs was thermally induced, which is characterized by the thermal activation energy between the LQDs and SQDs. Moreover, circularly polarized transient PL behavior from the SQD states exhibits a suppression of the spin polarization decay in the initial time region, depending on the excited spin density. This tentatively suppressed spin relaxation can be quantitatively explained by selective interdot transfer of minority-spin electrons from the SQDs into LQDs, when the majority spin states in both QDs are sufficiently populated by excited spins. These findings indicate that the high-density SQDs behave as the main emitters with suppressed spin relaxation, while the scattered LQDs with lower potential behave as the receivers of minority-spin electrons.
机译：在二维阵列的InGaAs高密度小量子点（SQD）的平均直径为16 nm，片密度为1.2 x 10（11）cm（-2）的情况下研究了点间载流子和自旋动力学。其中嵌入了直径为24 nm的大QD（LQD）作为局部电位最小值。我们观察到来自较低位置的LQD状态的延迟光致发光（PL）上升，以及来自较高位置的SQD状态的PL衰减明显更快，这表明载流子已从二维耦合的SQD转移到LQD中。另外，从LQD到SQD的反向载流子隧穿被热诱导，其特征在于LQD和SQD之间的热活化能。此外，根据激发的自旋密度，来自SQD状态的圆极化瞬态PL行为在初始时间范围内表现出自旋极化衰减的抑制作用。当两个自旋量子点中的大多数自旋态都由激发自旋充分填充时，这种暂时抑制的自旋弛豫可以通过少数自旋电子从SQD到LQD的选择性点间转移来定量解释。这些发现表明，高密度SQD充当自旋弛豫受到抑制的主要发射器，而具有较低电势的散射LQD充当少数自旋电子的接收器。

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  • 来源
    《Semiconductor science and technology》 |2019年第2期|025001.1-025001.7|共7页
  • 作者

    Hiura Satoshi; Urabe Masayuki; Takeishi Kazuki; Itabashi Kodai; Takayama Junichi; Kiba Takayuki; Sueoka Kazuhisa; Murayama Akihiro;

  • 作者单位

    Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Kita 14,Nishi 9, Sapporo, Hokkaido, Japan;

    Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Kita 14,Nishi 9, Sapporo, Hokkaido, Japan;

    Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Kita 14,Nishi 9, Sapporo, Hokkaido, Japan;

    Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Kita 14,Nishi 9, Sapporo, Hokkaido, Japan;

    Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Kita 14,Nishi 9, Sapporo, Hokkaido, Japan;

    Kitami Inst Technol, 165 Koen Cho, Kitami, Hokkaido, Japan;

    Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Kita 14,Nishi 9, Sapporo, Hokkaido, Japan;

    Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Kita 14,Nishi 9, Sapporo, Hokkaido, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    quantum dots; InGaAs; carrier dynamics; spin dynamics; laterally coupled quantum dots; carrier transfer;

    机译：量子点InGaAs载流子动力学自旋动力学横向耦合量子点载流子转移;

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