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首页> 外文期刊>Semiconductor science and technology >Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers
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Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers

机译：在绝缘体上硅晶片上制造的基于Si微线阵列的高响应宽带光电探测器

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摘要

We report a high responsivity broad band photodetector working in the wavelength range of 400-1100 nm made from a horizontal array of Si microlines (line width similar to 1 mu m) fabricated on a silicon-on-insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The array detector under full illumination of the device shows a peak Responsivity of 28 A W-1 at 750 nm, at a bias of 1 V which is more than an order of magnitude of the responsivity in a typical commercial Si detector (<= 1 A W-1). In a broad band of 400-1000 nm the responsivity of the detector is in excess of 10 A W-1. We could isolate the contributions of different parts of the microline to the photocurrent by using focused illumination. It was established through simulation that the partial suspension of the microlines in the array is necessary to obtain such high responsivity. The partial suspension isolates the microlines from the bulk of the wafer and inhibits carrier recombination by the underlying oxide layer leading to enhanced photoresponse which has been validated through simulation.
机译：我们报告了一种高响应性宽带光电探测器，该探测器工作在400-1100 nm的波长范围内，该探测器由绝缘体上硅（SOI）晶片上制造的水平水平的Si微线（线宽类似于1μm）制成。使用等离子体蚀刻，湿法蚀刻和电子束光刻的组合来制造阵列。它在SOI上形成了部分悬浮的（几乎没有）硅微结构。器件在完全照明下的阵列检测器在1 V偏置下在750 nm处显示28 A W-1的峰值响应度，这比典型的商用Si检测器的响应度大一个数量级（<= 1 W-1）。在400-1000 nm的宽带中，检测器的响应度超过10 A W-1。我们可以通过使用聚焦照明来隔离微线不同部分对光电流的贡献。通过仿真确定，微线在阵列中的部分悬浮是获得如此高的响应度所必需的。部分悬浮液将微线与晶片的大部分隔离，并通过下面的氧化物层抑制载流子复合，从而导致增强的光响应，这已通过仿真得到验证。

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