Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Thi Huong Ngo; Comyn Remi; Chenot Sebastien; Brault Julien; Damilano Benjamin; Vezian Stephane; Frayssinet Eric; Cozette Flavien; Rodriguez Christophe; Defrance Nicolas; Lecourt Francois; Labat Nathalie; Maher Hassan; Cordier Yvon

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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

机译：选择性GaN升华和局部区域再集成增强模式和耗尽模式Al（GA）N / GaN高电子移动晶体管

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In this paper, we report on the fabrication of a normally-off Al(Ga)N/GaN high electron mobility transistor with selective area sublimation under vacuum of the p type doped GaN cap layer. This soft method makes it possible to avoid damages otherwise induced by post processing with reactive ion etching techniques. The GaN evaporation selectivity is demonstrated on AlN as well as on AlGaN barrier layers. Furthermore, by properly choosing the AlGaN barrier thickness and composition it is possible to co-integrate a normally-off with a normally-on device on the same substrate. Finally, a local area regrowth of AlGaN can complement this process to increase the maximum drain current in the transistors.

机译：在本文中，我们报告了在P型掺杂GaN帽层真空下具有选择性区域升华的常关AL（GA）N / GaN高电子迁移率晶体管的制造。这种软化方法可以避免通过用反应离子蚀刻技术的后处理求损伤的损坏。在ALN以及AlGaN阻挡层上证明GaN蒸发选择性。此外，通过适当地选择AlGaN屏障厚度和组合物，可以在同一基板上与普通的装置共结合常关。最后，AlGaN的局部区域再生可以补充该过程以增加晶体管中的最大漏极电流。

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来源
《Semiconductor science and technology》 |2021年第2期|024001.1-024001.11|共11页
作者
Thi Huong Ngo; Comyn Remi; Chenot Sebastien; Brault Julien; Damilano Benjamin; Vezian Stephane; Frayssinet Eric; Cozette Flavien; Rodriguez Christophe; Defrance Nicolas; Lecourt Francois; Labat Nathalie; Maher Hassan; Cordier Yvon;
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作者单位

Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;

Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;

Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;

Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;

Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;

Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;

Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;

Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT CNRS UMI 3463 Lab Nanotechnol Nanosyst 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;

Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT CNRS UMI 3463 Lab Nanotechnol Nanosyst 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;

Univ Lille CNRS IEMN UMR8520 Ave Poincare F-59650 Villeneuve Dascq France;

OMMIC F-94450 Limeil Brevannes France;

Univ Bordeaux Lab Integrat Mat Syst Talence France;

Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT CNRS UMI 3463 Lab Nanotechnol Nanosyst 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;

Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
high electron mobility transistor; normally-off; normally-on; GaN; sublimation; epitaxy;

机译：高电子迁移率晶体管;常关;常开;GaN;升华;外延;

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1. Enhancement-Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique [J] . Akio Yamamoto, Keito Kanatani, Norifumi Yoneda, Physica status solidi . 2020,第7期

机译：使用AlGaN再生技术制造的具有高漏极电流的增强型AlGaN / GaN垂直沟槽金属-绝缘体-半导体高电子迁移率晶体管
2. Enhancing threshold voltage of AIGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode [J] . Rong Xuan, Wei-Hong Kuo, Chih-Wei Hu, Applied Physics Letters . 2012,第11期

机译：通过纳米棒结构提高AIGaN / GaN高电子迁移率晶体管的阈值电压：从耗尽模式到增强模式
3. Integrated Monolithic Inverter Using Gate-Recessed GaN-Based Enhancement-Mode and Depletion-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors [J] . Lee Ching-Ting, Lee Hsin-Ying, Chang Jhe-Hao ECS Journal of Solid State Science and Technology . 2017,第10期

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4. The Development of a New Ion Versus Log(Ig) Plot to Characterize Depletion-Mode High Electron Mobility Transistors with the Insertion of a Very Thin Evaporated Al Layer to AlGaN/GaN High Electron Mobility Transistors as an Example [C] . Wai Shing Lau, Joy Tan Meeting of the Electrochemical Society;International Meeting on Chemical Sensors . 2020

机译：新的离子与log（Ig）图的开发，以表征耗尽模式高电子迁移率晶体管，随着将非常薄的蒸发的Al层插入AlGaN / GaN高电子迁移率晶体管作为示例
5. Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations. [D] . Soligo, Riccardo. 2016

机译：通过基于Monte Carlo粒子的器件仿真对GaN高电子迁移率晶体管和热电子晶体管进行建模和设计。
6. Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors [O] . Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, 2020

机译：AlGaN / GaN高电子迁移率氟处理和凹槽通过氟处理和凹陷栅极充电效果
7. Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor [O] . Raphael Brown, Abdullah Al-Khalidi, Douglas Macfarlane, 2014

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8. Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. [R] . Nochetto, H. C., Jankowski, N. R., Morgan, B., 2012

机译：结合GaN衬底热边界电阻的氮化镓（GaN）高电子迁移率晶体管（HEmT）器件的混合多栅模型。

Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

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