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首页> 外文期刊>Semiconductor science and technology >Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs
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Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs

机译：由于采用极度双不对称垂直设计的9xx nm高功率二极管激光器的优化光学限制，降低了功率饱和

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摘要

Broad area lasers with novel extreme double asymmetric structure (EDAS) vertical designs featuring increased optical confinement in the quantum well, Gamma, are shown to have improved temperature stability without compromising series resistance, internal efficiency or losses. Specifically, we present here vertical design considerations for the improved continuous wave (CW) performance of devices operating at 940 nm, based on systematically increasing G from 0.26% to 1.1%, and discuss the impact on power saturation mechanisms. The results indicate that key power saturation mechanisms at high temperatures originate in high threshold carrier densities, which arise in the quantum well at low Gamma. The characteristic temperatures, T-0 and T-1, are determined under short pulse conditions and are used to clarify the thermal contribution to power limiting mechanisms. Although increased Gamma reduces thermal power saturation, it is accompanied by increased optical absorption losses in the active region, which has a significant impact on the differential external quantum efficiency, eta(diff) .To quantify the impact of internal optical losses contributed by the quantum well, a resonator length- dependent simulation of eta(diff) is performed and compared to the experiment, which also allows the estimation of experimental values for the light absorption cross sections of electrons and holes inside the quantum well. Overall, the analysis enables vertical designs to be developed, for devices with maximized power conversion efficiency at high CW optical power and high temperatures, in a trade-off between absorption in the well and power saturation. The best balance to date is achieved in devices using EDAS designs with Gamma = 0.54%, which deliver efficiencies of 50% at 14W optical output power at an elevated junction temperature of 105 degrees C.
机译：具有新颖的极端双不对称结构（EDAS）垂直设计的广域激光器，其在量子阱Gamma中的光学限制增加，被证明具有改善的温度稳定性，而不会影响串联电阻，内部效率或损耗。具体而言，在此我们基于将G从0.26％提高到1.1％的基础上，针对在940 nm下工作的器件的连续波（CW）性能的改善提出了垂直设计考虑，并讨论了对功率饱和机制的影响。结果表明，高温下的关键功率饱和机制起源于高阈值载流子密度，该阈值出现在低伽玛系数的量子阱中。特征温度T-0和T-1是在短脉冲条件下确定的，用于阐明热对功率限制机制的影响。尽管增加的Gamma会降低热功率饱和度，但同时会增加有源区的光吸收损耗，这对差分外部量子效率eta（diff）产生了重大影响。要量化由量子贡献的内部光学损耗的影响很好地，执行了与谐振器长度相关的eta（diff）模拟，并将其与实验进行了比较，这也允许估算量子阱内部电子和空穴的光吸收截面的实验值。总的来说，该分析使得能够开发垂直设计，从而在井中吸收与功率饱和之间进行权衡，从而在高CW光功率和高温下实现具有最大功率转换效率的设备。迄今为止，在采用EDAS设计且Gamma = 0.54％的设备中实现了最佳的平衡，当在105°C的高温结温下，以14W的光输出功率提供50％的效率。

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  • 来源
    《Semiconductor science and technology》 |2018年第3期|035005.1-035005.9|共9页
  • 作者

    Kaul T.; Erbert G.; Maassdorf A.; Knigge S.; Crump P.;

  • 作者单位

    Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany;

    Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany;

    Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany;

    Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany;

    Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    AlGaAs; diode lasers; chip design; high power high efficiency; continuous wave; EDAS; ADCH;

    机译：AlGaAs;二极管激光器;芯片设计;高功率高效率;连续波;EDAS;ADCH;

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