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Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy

机译：用正电子寿命谱研究塑性变形硅中缺陷的热稳定性

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摘要

Defects in phosphorus-doped float-zone silicon single crystals plastically deformed at 800℃ were studied by the positron lifetime technique. The lifetime measurements were performed for the undeformed, as-deformed and all annealed samples at temperatures varying from 20 K to 300 K. Three kinds of defects including vacancy clusters, dislocation-bound vacancies and undisturbed dislocations are induced by deformation. It is proposed that the dislocation could be charged and this was well proved by fitting the experimental positron lifetime with all possible positron trapping models. The fitted results indicate that during the annealing process dislocation-bound vacancies are quite stable and they cannot be annealed out until a thermal treatment at 1300℃, when the negatively charged dislocation acts as shallow positron traps which influence significantly the measured average positron lifetime. The density of the dislocation line decreases unconspicuously below the annealing temperature of 1000℃, and the transition rate between the related defects of the dislocation line and vacancies is almost constant.
机译：利用正电子寿命技术研究了800℃塑性变形的掺磷浮区硅单晶的缺陷。在20 K至300 K的温度范围内对未变形，变形和所有退火的样品进行了寿命测量。变形引起了三种缺陷，包括空位团簇，位错结合的空位和未受干扰的位错。提出可以使位错带电，并且通过将实验正电子寿命与所有可能的正电子俘获模型拟合来很好地证明了这一点。拟合结果表明，在退火过程中，位错结合的空位非常稳定，直到1300℃进行热处理时，它们才能退火，而带负电荷的位错充当浅正电子陷阱，这会显着影响测得的平均正电子寿命。在1000℃的退火温度以下，位错线的密度显着降低，位错线的相关缺陷与空位之间的过渡速率几乎恒定。

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  • 来源
    《Semiconductor science and technology》 |2012年第3期|p.25.1-25.7|共7页
  • 作者

    Jin-Biao Pang; Hartmut S Leipner; Reinhard Krause-Rehberg; Zhu Wang; Kai Zhou; Hui Li;

  • 作者单位

    College of Physics and Technology, Laboratory of nuclear solid physics,Wuhan University, Wuhan 430072, People's Republic of China;

    Center of Material Science, Martin Luther University, D-06099 Halle, Germany;

    Department of Physics, Martin Luther University, 06108 Halle, Germany;

    College of Physics and Technology, Laboratory of nuclear solid physics,Wuhan University, Wuhan 430072, People's Republic of China;

    College of Physics and Technology, Laboratory of nuclear solid physics,Wuhan University, Wuhan 430072, People's Republic of China;

    College of Physics and Technology, Laboratory of nuclear solid physics,Wuhan University, Wuhan 430072, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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