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首页> 外文期刊>Semiconductor science and technology >Analysis and improvement of the position nonlinearity caused by a residual stress in MOS-type position-sensitive detectors with indium tin oxide gate contact
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Analysis and improvement of the position nonlinearity caused by a residual stress in MOS-type position-sensitive detectors with indium tin oxide gate contact

机译：氧化铟锡栅极接触的MOS型位置灵敏探测器中由残余应力引起的位置非线性的分析和改进

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摘要

In this paper, lateral effect position-sensitive detectors based on the MOS principle have been fabricated in lengths of 15 mm, 45 mm and 60 mm. The gate contact covering the active area consists of indium tin oxide which is a degenerate semiconductor transparent in the visible spectral range. Characterization and analysis have both been performed especially with particular focus on the nonlinearity believed to be caused by stray stress induced in the inversion channel originating in the indium tin oxide gate contact. Stress in the channel will change the resistance in a non-uniform manner because of the piezoresistance effect, thus causing a nonlinearity in the position determination. It has been shown that the heat treatment greatly influences the linearity of the position-sensitive detectors. A heat treatment performed correctly results in 60 mm and 15 mm detectors with nonlinearity within ±0.1% and 45 mm detectors with nonlinearity within ±0.15% over 60% of the active length. This is an improvement over the previous results with this type of MOS position-sensitive detector. By performing a correctly timed heat treatment this PSD type has the potential to be used in common position-sensing applications.
机译：在本文中，基于MOS原理的横向效应位置敏感检测器的长度分别为15 mm，45 mm和60 mm。覆盖有源区的栅极触点由铟锡氧化物组成，铟锡氧化物是在可见光谱范围内透明的简并半导体。表征和分析都已经进行，特别是着眼于非线性，该非线性被认为是由源自铟锡氧化物栅极接触的反型沟道中引起的杂散应力引起的。由于压阻效应，通道中的应力将以非均匀的方式改变电阻，从而导致位置确定中的非线性。已经表明，热处理极大地影响了位置敏感检测器的线性。正确执行热处理会导致60 mm和15 mm探测器的非线性在有效长度的60％内，误差在±0.1％之内，而45 mm探测器的非线性在±0.15％之内。这是对这种类型的MOS位置敏感检测器的先前结果的改进。通过执行正确的定时热处理，该PSD类型有可能在常见的位置感应应用中使用。

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