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Study of thermally grown and photo-CVD deposited silicon oxide―silicon nitride stack layers

机译：热生长和光CVD沉积的氧化硅-氮化硅叠层的研究

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Silicon oxide―silicon nitride (ON) stack layers have been formed by mercury sensitized photochemical vapour deposition (photo-CVD) of silicon nitride layers over thermally grown and photo-CVD deposited silicon oxide layers on p-type Si (100) substrates. The properties of these two groups of samples were studied using Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurements. Photo-CVD deposited nitrogen-rich stoichiometric silicon nitrides over thermally grown oxides give less electronic state density with an increased Si―N bond concentration, and on the other hand photo-CVD deposited oxide-nitride stacks give less fixed oxide charges. The absence of Si―H bonds in nitrides indicates that all nitrides are hydrogenated. Oxygen incorporation in the nitride layer was studied from FTIR and XPS measurements, which in turn affects the properties of these stack layers.
机译：氧化硅-氮化硅（ON）堆叠层是通过在p型Si（100）衬底上的热生长和光CVD沉积的氧化硅层上进行汞敏化光化学气相沉积（photo-CVD）形成的。使用傅里叶变换红外光谱（FTIR），X射线光电子能谱（XPS）和电容电压测量研究了两组样品的性能。在热生长的氧化物上进行光CVD沉积的富氮化学计量的氮化硅，Si-N键浓度增加，电子态密度降低；另一方面，经光化学气相沉积的氧化物-氮化物叠层的固定氧化物电荷降低。氮化物中没有Si-H键表明所有氮化物都被氢化了。通过FTIR和XPS测量研究了氮在氮化物中的掺入，这反过来影响了这些叠层的性能。

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