首页> 外文期刊>Semiconductor science and technology >Reply to Comment on 'New ways of developing glass/conducting glass/CdS/CdTe/metal thin-film solar cells based on a new modeP, by Dharmadasa et al 2002 Semicond. Sci. Technol 17 1238―48
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Reply to Comment on 'New ways of developing glass/conducting glass/CdS/CdTe/metal thin-film solar cells based on a new modeP, by Dharmadasa et al 2002 Semicond. Sci. Technol 17 1238―48

机译:Dharmadasa等人2002 Semicond对“基于新模式P开发玻璃/导电玻璃/ CdS / CdTe /金属薄膜太阳能电池的新方法”的评论答复。科学技术17 1238―48

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摘要

A high short-circuit current density of 69.1 mA cm~(-2) for silicon solar cells was first published over a decade ago. A few photovoltaic research groups dismissed that report indicating errors must have been made in measurement. Our work on both CdTe and CIGS based tandem solar cells has also shown similar high current densities and provides one possible explanation for the observations on silicon solar cells. This paper identifies the urgent need for theoretical calculations for multilayer graded bandgap tandem solar cells.
机译:硅太阳能电池的高短路电流密度为69.1 mA cm〜(-2)于10年前首次发布。几个光伏研究小组认为该报告指出必须在测量中出现错误。我们在基于CdTe和CIGS的串联太阳能电池上的工作也显示了相似的高电流密度,并为观察硅太阳能电池提供了一种可能的解释。本文确定了多层梯度带隙串联太阳能电池的理论计算的迫切需求。

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