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首页> 外文期刊>Semiconductor science and technology >Comment on ‘Modelling the optical constants of GaAs: excitonic effects at E_1, E_1 + Δ_1 critical points'
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Comment on ‘Modelling the optical constants of GaAs: excitonic effects at E_1, E_1 + Δ_1 critical points'

机译：评论“对GaAs的光学常数建模：在E_1，E_1 +Δ_1临界点处的激子效应”

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摘要

Djurisic and Li [1] have recently presented a calculation of the optical constants of GaAs in which they do not take into account excitonic effects at either E_1, E_1 + Δ_1 or E_0, E_0 + Δ_0 critical points (CPs). They employ band-to--band single-particle expressions with an energy-dependent pseudo--Gaussian broadening function. Their paper states that including excitonic effects at the former CPs has ‘dubious physical interpretation'. It is also claimed that (a) ‘excitonic effects are usually more pronounced at E_0, E_0 + Δ_0 than at the E_1, E_1 + Δ_1 CPs', (b) ‘at room temperature the excitons are severely broadened and should not contribute significantly to the dielectric function' and (c) ‘excitonic effects at E_1, E_1 + Δ_1 critical points do not represent a significant contribution to the dielectric function at room temperature for materials with low exciton binding energy'. These statements are completely incorrect, as is their fitting scheme.
机译：Djurisic和Li [1]最近提出了一种GaAs光学常数的计算方法，其中他们没有考虑在E_1，E_1 +Δ_1或E_0，E_0 +Δ_0临界点（CP）处的激子效应。他们采用具有能量依赖的伪高斯展宽函数的带对带单粒子表达式。他们的论文指出，在前CP中加入激子效应具有“可疑的物理解释”。还声称（a）'激子效应通常在E_0，E_0 +Δ_0处比在E_1，E_1 +Δ_1CPs处更为明显'，（b）'在室温下激子被严重展宽，不应对介电函数”和（c）“对于激子结合能低的材料，在E_1，E_1 +Δ_1临界点处的激子效应对室温的介电函数没有显着贡献”。这些陈述以及它们的拟合方案都是完全错误的。

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