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首页> 外文期刊>Sensors and Actuators >UV-light enhanced CO gas sensors based on InGaN nanorods decorated with p-Phenylenediamine-graphene oxide composite
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UV-light enhanced CO gas sensors based on InGaN nanorods decorated with p-Phenylenediamine-graphene oxide composite

机译：基于对苯二甲胺-氧化石墨烯复合材料装饰的基于InGaN纳米棒的紫外线增强型CO气体传感器

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摘要

Coupling of graphene and its derivatives with organic moieties is one of the promising strategies to enhance the gas sensing performance. A novel ternary nanocomposite of p-Phenylenediamine-graphene oxide (PGO)/InGaN nanorods (NRs) probed as chemiresistive gas sensor for carbon monoxide (CO) in ppm concentrations. The InGaN NRs were grown by molecular beam epitaxy, and a drop-casting method was employed to decorate the PGO composite on InGaN NRs. The sensor devices consisting of PGO/InGaN NRs with interdigitated electrodes have been fabricated, and their sensing characteristics for CO were studied. PGO composite provided a significant decrease in the electrical resistance of the ternary nanocomposite of PGO/InGaN at the operating temperature (27 ℃ -100 ℃). The sensor device based on PGO/InGaN NRs exhibited a higher response than the GO/InGaN NRs. The PGO/InGaN NRs device exhibited a maximum sensing response of ～ 131 % at a CO concentration of 100 ppm at an operation temperature of 100 ℃, which is 2.7 times higher than the GO/InGaN NRs sensor response. Also, the response (～93.58%) was remarkably improved under UV illumination at room temperature. The combined effect of active cites in GO and the increased electron density at the nitrogen atom in the amine groups of the PGO are responsible for the excellent performance
机译：石墨烯及其衍生物与有机部分的偶联是增强气体传感性能的有前途的策略之一。一种新型三元纳米对苯二胺氧化石墨烯（PGO）/ InGaN纳米棒（NRs）的三元纳米复合材料，可作为ppm浓度的一氧化碳（CO）的化学阻气传感器。通过分子束外延生长InGaN NRs，并采用滴铸法在InGaN NRs上装饰PGO复合材料。制备了由具有交叉指状电极的PGO / InGaN NR组成的传感器器件，并研究了其对CO的传感特性。 PGO复合材料在工作温度（27℃-100℃）下显着降低了PGO / InGaN三元纳米复合材料的电阻。基于PGO / InGaN NR的传感器器件显示出比GO / InGaN NR更高的响应。在100℃的工作温度下，PGO / InGaN NRs器件在100 ppm CO浓度下表现出的最大感测响应为131％，比GO / InGaN NRs传感器响应高2.7倍。另外，室温下在紫外线照射下，响应度（〜93.58％）显着提高。 GO中活性碳原子与PGO胺基团氮原子上电子密度增加的综合作用是其出色的性能

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