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首页> 外文期刊>Sensors and Actuators. B, Chemical >Fast response H_2S gas sensing characteristics with ultra-thin CuO islands on sputtered SnO_2
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Fast response H_2S gas sensing characteristics with ultra-thin CuO islands on sputtered SnO_2

机译：溅射SnO_2上具有超薄CuO岛的快速响应H_2S气敏特性

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摘要

Response characteristics of undoped SnO_2 are compared with two different types of Cu-SnO_2 thin film bilayer structures: (a) SnO_2 surface covered by an ultra-thin (～10 nm) Cu layer, and (b) SnO_2 surface covered with thin Cu dots, and the bilayers were annealed in air/O_2 to form CuO. Response speed for sensing H_2S gas concentration in the range 20-1200 ppm was measured using platinum (Pt) inter-digital electrodes underneath the SnO_2 film. SnO_2 film with CuO dotted islands is found to exhibit a high sensitivity of 7.4 x 10~3 at 150℃, and a fast response time of 15 s to 20 ppm of H_2S, and the recovery time is approximately 118 s. The high sensitivity and the fast response are shown to be primarily due to a dominant role played by the spill-over mechanism.
机译：将未掺杂的SnO_2的响应特性与两种不同类型的Cu-SnO_2薄膜双层结构进行了比较：（a）SnO_2表面覆盖有超薄（〜10 nm）的Cu层；（b）SnO_2表面覆盖有薄的Cu点，并将双层在空气/ O_2中退火形成CuO。使用SnO_2膜下的铂（Pt）叉指电极测量了感应H_2S气体浓度在20-1200 ppm范围内的响应速度。发现具有CuO点状岛的SnO_2薄膜在150℃下具有7.4 x 10〜3的高灵敏度，对H_2S的20 ppm的响应时间为15 s，恢复时间约为118 s。高灵敏度和快速响应被证明主要是由于溢出机制所起的主导作用。

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