Electrical Characteristics of Doped Silicon Nanowire Channel Field-Effect Transistor Biosensors

著录项

• 来源
  《Sensors Journal, IEEE》 |2017年第3期|667-673|共7页
• 作者

  Taiuk Rim; Kihyun Kim; Hyeonsu Cho; Wooju Jeong; Jun-Sik Yoon; Yumi Kim; M. Meyyappan; Chang-Ki Baek;

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• 作者单位

  Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea;

  Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea;

  Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea;

  Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea;

  Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea;

  Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea;

  NASA Ames Research Center, Moffet Field, CA, USA;

  Department of Creative IT Engineering, Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Sensor phenomena and characterization; Logic gates; Silicon; Field effect transistors; Biosensors;

  机译：传感器现象与表征逻辑门硅场效应晶体管生物传感器;